LD-PD's InGaAs pin structure based on InP by MOCVD method and planar diffusing technology. The sensitive areas of TO photodiode series products are φ75µm、φ300µm、φ500µm、φ1mm、φ2mm、φ3mmrespectively. The products with other sensitive area, shape or package style can also be provided according to the demand of users.
Name | Model | Description | Parameter | Price |
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● High Responsivity, front side illuminated,double-side pads
● Φ=1mm, round optical window
● Optimized for Machane(CH4) detection(1654nm), improving responsivity in low-temperature environment
The Opto-electronic Characteristics(@Tc=22±3℃)
Parameter | Test Condition | Min. | Typ. | Max. | Unit |
Responsivity1 | λ=1310nm | 0.90 | 0.95 | — | A/W |
Responsivity2 | λ=1550nm | 0.95 | 1.00 | — | A/W |
Dark Current | V=-5V | — | 0.8 | 3.0 | nA |
Breakdown Voltage | I=-10µA | 40.0 | — | — | V |
Capacitance | V=-5V,f=1MHz | — | 45 | 65 | pF |
Forward Voltage | I=1mA | — | 0.43 | 0.70 | V |
As shown in Figure 1 @ Vr=0V TC=22± 3℃
Responsivity, R (A/W)
As shown in figure 1
figure 1
Parameter | Min. | Typ. | Max. | Unit | Notes |
Die Width | 1140 | 1150 | 1160 | µm | |
Die Length | 1140 | 1150 | 1160 | µm | |
Detection Window | — | 1000 | — | µm | |
Thickness | 190 | 200 | 210 | µm | |
Bonding Pad Diameter | — | 150 | — | µm | For p-pad |
Note: The structure of PIN PD is planar and front illuminated with P electrode on the top and N electrode on the bottom.
Absolute Maximum Rating
Parameter | Rating |
Electrostatic Discharge (HBM) | >1200V |
Reverse Current | -10mA |
Forward Current | 10mA |
Reverse Voltage | -20V |
Operating Temperature | -40 to 85 ⁰C |
Storage Temperature | -40 to 125 ⁰C |
Attention:
Handle with care, InP is a brittle material. The device can be permanently damaged when exposed to ESD. Specifications are subject to change without notice.
● Fiber communication
● Fiber sensor