PD1000 InGaAs Photodiode Chip

Response wavelngth 1000-1680nm, Material InGaAs, Active area 1000um, Die Package, size 1150μm×1150μm （Min Order:100PCS）

Part Number : PD1000

Unit Price : USD [Please inquire]

Lead time : in stock

Inventory quantity : [Please inquire]

Stock NO. : I80030007

Email Us Request for Quotation

Overview
Electrical/Optical Characteristics
PDF
RFQ

LD-PD's InGaAs pin structure based on InP by MOCVD method and planar diffusing technology. The sensitive areas of TO photodiode series products are φ75µm、φ300µm、φ500µm、φ1mm、φ2mm、φ3mmrespectively. The products with other sensitive area, shape or package style can also be provided according to the demand of users.

The Opto-electronic Characteristics（@Tc=22±3℃）

Parameter	Test Condition	Min.	Typ.	Max.	Unit
Responsivity1	λ=1310nm	0.90	0.95	—	A/W
Responsivity2	λ=1550nm	0.95	1.00	—	A/W
Dark Current	V=-5V	—	0.8	3.0	nA
Breakdown Voltage	I=-10µA	40.0	—	—	V
Capacitance	V=-5V,f=1MHz	—	45	65	pF
Forward Voltage	I=1mA	—	0.43	0.70	V

As shown in Figure 1 @ Vr=0V TC=22± 3℃

M=1 Response Curve

QQ图片20221129101709.jpg

Responsivity, R (A/W)

Download

PD1000 InGaAs Photodiode Chip.pdf

PD1000 InGaAs Photodiode Chip

Download

Recommended

Request for Quotation