Our InGaAs detectors have a sensitivity range of 400~1700nm and are commonly used for visible light and near-infrared light measurement. They are amplified detectors with 8 levels of adjustable gain and quantitative photoelectric conversion. They have a wide dynamic range and are suitable for various optoelectronic development scenarios and are widely used. They have excellent performance, high cost performance, and comprehensive technical support. We also provide non-standard customized services.
Name | Model | Description | Parameter | Price |
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● InGaAs detector, with a sensitivity range of 400nm~1700nm, is commonly used for near-infrared light measurement;
● Amplified detector, 8-level adjustable gain, quantitative photoelectric conversion;
● Wide dynamic range, suitable for various photoelectric development scenarios, widely used;
● Excellent performance, high cost performance, all-round technical support;
● Provide non-standard customized services.
Specification
PN# | InGaAs-0.4/1.7um-1X1mm-AG8 | InGaAs-0.4/1.7um-2X2mm-AG8 | |||
Spectrum response range | 400~1700nm | ||||
Response time constant | 5ns | 35ns | |||
Gain | Hi-Z load: 1.51kV/A~4.75 MV/A; 50Ω load: 0.75kV/A~2.38 MV/A | ||||
Signal amplitude | Hi-Z load: 0~10V; 50Ω load: 0~5V | ||||
Gain adjustment method | Rotary gear adjustment, 0~70dB, 10dB per gear, 8 gears in total. Bandwidth is inversely proportional to gain. | ||||
NEP | 1.4X10-12(W/Hz1/2) | 5.2X10-13(W/Hz1/2) | |||
Active area | 1mm x 1mm | 2mm x 2mm | |||
Photosensitive surface depth | 0.13" (3.3 mm) | ||||
Detector net weight | 0.10kg | ||||
Operating temperature | 10~40℃ | ||||
Storage temperature | -20~70℃ | ||||
Appearance size | 2.79" x 2.07" x 0.89" (70.9 mm x 52.5 mm x 22.5 mm) | ||||
Power supply interface | Power switch | Signal interface | Gain adjustment | Support rod interface | Optical interface |
LUMBERG RSMV3 FEMALE | Slide switch with LED indicator | BNC female socket | 8-position knob | M4 x 2 | SM1 x 1 SM0.5 x 1 |
Eight-level quantitatively adjustable gain parameters
0dB | 10dB | 20dB | 30dB | ||||
Gain (Hi-Z) | 1.51X103V/A | Gain (Hi-Z) | 4.75X103V/A | Gain (Hi-Z) | 1.5X104V/A | Gain (Hi-Z) | 4.75X104V/A |
Gain (50Ω) | 0.75X103V/A | Gain (50Ω) | 2.38X103V/A | Gain (50Ω) | 0.75X104V/A | Gain (50Ω) | 2.38X104V/A |
Bandwidth (BW) | 13MHz | Bandwidth (BW) | 1.7MHz | Bandwidth (BW) | 1.1MHz | Bandwidth (BW) | 300kHz |
Noise (RMS) | ≤250μV | Noise (RMS) | ≤250μV | Noise (RMS) | ≤250μV | Noise (RMS) | ≤250μV |
40dB | 50dB | 60dB | 70dB | ||||
Gain (Hi-Z) | 1.51X105V/A | Gain (Hi-Z) | 4.75X105V/A | Gain (Hi-Z) | 1.5X106V/A | Gain (Hi-Z) | 4.75X106V/A |
Gain (50Ω) | 0.75X105V/A | Gain (50Ω) | 2.38X105V/A | Gain (50Ω) | 0.75X106V/A | Gain (50Ω) | 2.38X106V/A |
Bandwidth (BW) | 90kHz | Bandwidth (BW) | 28kHz | Bandwidth (BW) | 9kHz | Bandwidth (BW) | 3kHz |
Noise (RMS) | ≤250μV | Noise (RMS) | ≤250μV | Noise (RMS) | ≤300μV | Noise (RMS) | ≤400μV |
Signal bias | ±8mV(Typ.) ,±12mV(Max) |
Spectral response curve
Product Configuration
● Monitor the output of Q-switched lasers
● Monitor the output of mode-locked lasers
PN# | Spectrum response range | Active area | Gain range | Characteristic |
InGaAs-0.4/1.7um-1X1mm-AG8 |
400~ 1700nm | 1mm X 1mm | 0~70dB Eight-speed quantitative adjustable gain | Covering visible to infrared dual bands |
InGaAs-0.4/1.7um-2X2mm-AG8 | 2mm X 2mm | Large target area |