1550nm High Power Gain Chip

Gain chips are semiconductor optical elements used as the optical gain medium of external cavity laser diodes. Gain chips are used as a TLS (Tunable Light Source) that can change the oscillation wavelength using a wavelength selection filter such as a diffraction grating.

Name	Model	Description	Parameter	Price
1550nm High Power Gain Chip [PDF] [RFQ]	HP-GC-1550-1 Stock NO.: I80040006	Central wavelength 1550nm, Output power 40mW, ASE bandwidth 50nm, SMSR 40dB（Min qty: 5pcs）	Central wavelength: 1550nm Output power: 40mW Lead Time: 2-3 weeks	[Please inquire] Call us

Name

Model

Description

Parameter

Price

1550nm High Power Gain Chip [PDF] [RFQ]

HP-GC-1550-1
Stock NO.: I80040006

Central wavelength 1550nm, Output power 40mW, ASE bandwidth 50nm, SMSR 40dB（Min qty: 5pcs）

Central wavelength: 1550nm

Output power: 40mW

Lead Time: 2-3 weeks

[Please inquire]

Call us

Parameter

Features

● AlGaInAs MQW(Multiple Quantum Well）

● Broad tuning range

● High output power

● Edge-emitting

● Low facet reflectivity

● C band coverage

E/O Characteristics

Electro-Optical Characteristics

Characteristics of RSOA chip:

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Beam Exit Angle	Θext	Tc=25℃&CW I=200mA	--	19.5	--	。
Optical Output Power	P	Tc=25℃&CW I=200mA	5	15	--	mW
Series Resistance	Rs	Tc=25℃&CW I=200mA	--	2	4	Ohm
Forward Voltage	V	Tc=25℃&CW I=200mA		1.3	2	V
Center wavelength	λ	Tc=25℃&CW I=200mA	--	1540	--	nm
ASE bandwidth	Δλ	Tc=25℃&CW I=200mA@-3dB	40	50	--	nm
Angled Facet Reflectivity	R1	--	--	0.01	--	%
Angled Facet Reflectivity	R2	--	--	90	--	%
Length	L	--	--	1000	--	μm
Farfield (Vertical)	θ v	Tc=25℃&CW I=200mA@R1	--	19	--	。
Farfield (Horizontal)	θ h	Tc=25℃&CW I=200mA@R1	--	13	--	。

Characteristics based on little external cavity reflectivity at 1550nm:

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Threshold Current	Ith	Tc=25℃&CW	--	20	40	mA
Wavelength Range	λp	Tc=25℃&CW	--	1550	--	nm
Optical Output Power	P	Tc=25℃&CW I=200mA	20	40	--	mW
Series Resistance	Rs	Tc=25℃&CW I=200mA	--	2	4	Ohm
Side Mode Suppression Ratio	SMSR	Tc=25℃&CW I=200mA	--	50	--	dB
Forward Voltage	V	Tc=25℃&CW I=200mA		1.3	2	V

Typical Performance of RSOA Chip:

Absolute maximum ratings*：

Parameter	Symbol	Min.	Max.	Unit
Operating Temperature	To	-5	85	℃
Storage Temperature	Ts	-40	100	℃
Forward current	If	--	500	mA
Reverse Voltage	VR	--	2	V
ESD(HBM)	ESD	--	500	V

*Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.

**These maximum stresses are to be applied only after the chip is properly bonded to a heat sink. Applying current to a bare chip can damage the device.

Outline Diagram and Die Dimensions

Chip appearance and size (unit: mm):

Chip Dimensions (w*l*h) = 300±10μm*1000±20μm*100±10μm

ESD and EOS:

Switching transients can cause electrical overstress (EOS) damage in a chip.

EOS may result from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection.

Proper turn-on sequence:

a.All ground connections

b. Most negative supply

c. Most positive supply

d. All remaining connections Reverse order to turn-off.

Laser Safety:

Caution: Use of controls, adjustments and procedure other than those specified herein may result in hazardous laser radiation exposure.

Application

● Gain medium for widely tunable external cavity semiconductor lasers

● Gain medium for narrow linewidth lasers

1550nm High Power Gain Chip

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