Responsivity R_e

V_R=5V,   λ=1.55μm, P_in=10mW

≥0.80

A/W

3dB bandwidth f_3dB

V_R=5V,   λ=1.55μm, P_in=10mW, R_Fin=-10dB

0.8～18

GHz

In-band flatness F

V_R=5V,   λ=1.55μm, P_in=10mW, R_Fin=-10dB, f_BW  =0.8 GHz～18.8 GHz

≤±1.5

dB

Output standing wave ratio VSWR

V_R=5V,   λ=1.55μm, P_in=10mW, R_Fin=-10dB, f_BW  =0.8 GHz～18.8 GHz

≤2.5:1

-

Saturated input optical power P_S

V_R=5V,   λ=1.55μm, f_c=9.8 GHz, R_Fin=-10dB

≥10

mW

Gain G

V_R=5V,   λ=1.55μm, f_c=9.8 GHz, R_Fin=-10dB, R_Fin=-10dB

≥13

dB

LNA operating current I_cc

V_R=5V,   λ=1.55μm, P_in=10mW

60～90

mA

Storage temperature range T_STG

-45～+85

℃

Operating temperature range T_C

-40～+70

℃

Bias voltage V_R

4.5～5.5

V

Light incident power P_in（VR=5V）

≤13

mW

Soldering temperature Tsolder

260（10s）

℃

Electrostatic discharge sensitivity ESD

≥250

V