Φ1~5mm Low capacitance and Large Active Area InGaAs PD Chips

InGaAs PIN photodiode series chips with low capacitance and large photosensitive surface are front-facing planar structures, and provide various models with φ1mm, φ2mm, medium 3mm, φ5mm circular photosensitive surfaces and 1.5mm×6mm square photosensitive surfaces. Some models provide low-capacitance versions with Features such as high bandwidth, high sensitivity, and high reliability can meet the requirements of hotoelectric alarm, laser.

Name	Model	Description	Parameter	Price
1mm InGaAs PIN photodiode series chips [PDF] [RFQ]	LP-LC1 (Stock NO. Not entered)	Response wavelngth 900-1700nm, responsivity: 0.65A/W@1.064µm or 0.95A/W@1.55µm, Material InGaAs, Active area 1mm, Die Package, （Min Order:100PCS）	Response wavelength: 900-1700nm Material: InGaAs Active area: 1mm Lead Time: 2-3 weeks	[Please inquire] Call us
5mm InGaAs PIN photodiode series chips [PDF] [RFQ]	LP-LC5 Stock NO.: I80030013	Response wavelngth 900-1700nm, responsivity:0.65A/W@1.064µm or 0.95A/W@1.55µm, Material InGaAs, Active area 5mm, Die Package, （Min Order:100PCS）	Response wavelength: 900-1700nm Material: InGaAs Active area: 5mm Lead Time: 2-3 weeks	[Please inquire] Call us
3mm InGaAs PIN photodiode series chips [PDF] [RFQ]	LP-LC3 Stock NO.: I80030012	Response wavelngth 900-1700nm, responsivity:0.65A/W@1.064µm or 0.95A/W@1.55µm, Material InGaAs, Active area 3mm, Die Package, （Min Order:100PCS）	Response wavelength: 900-1700nm Material: InGaAs Active area: 3mm Lead Time: 2-3 weeks	[Please inquire] Call us
2mm InGaAs PIN photodiode series chips [PDF] [RFQ]	LP-LC2 Stock NO.: I80030011	Response wavelngth 900-1700nm, responsivity:0.65A/W@1.064µm or 0.95A/W@1.55µm, Material InGaAs, Active area 2mm, Die Package, （Min Order:100PCS）	Response wavelength: 900-1700nm Material: InGaAs Active area: 2mm Lead Time: 2-3 weeks	[Please inquire] Call us

Parameter

Features

● Provide ultra-low low capacitance option

● Active area 1mm~5mm

● Provide chip or TO package

● Accept customized requirements

Specifications

Main performance indicators

Technical indicators

Symbol

Unit

category

Model

LP-LC1

LP-LC2

LP-LC3

LP-LC5

LP-LC1.5

Typ

Max

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Active Area

Ordinary

φ1

φ2

φ3

φ5

1.5×6

low capacitance

Response time*

Ordinary

117

low capacitance

-3dB Bandwidth

f₃dB

MHz

Ordinary

low capacitance

150

Capacitance

Ordinary

40 @1V

130@1V

300@1V

850 @1V

1100@1V

low capacitance

25@1V

70@1V

180 @1V

400@1N

520@1V

Ordinary

30 @5V

100 @5V

200 @5V

750 @2V

960 @2V

low capacitance

15 @5V

50 @5V

100@5V

300 @2V

380 @2V

Ordinary

20 @25V

75 @25V

170@25V

600@5V

770@5V

low capacitance

10 @25V

35 @25V

90@25V

200@5V

260@5V

Reverse breakdown

voltage

Ordinary

low capacitance

Dark Current

Ordinary

low capacitance

100

Quality reliability, The product meets the requirements of Telcordia-GR-468-CORE for product reliability.

Absolute Maximum Ratings

Technical indicators	Symbol	Index value	Unit
Average forward current	I	100	mA
Total power consumption	PTon	100	mW
Average photocurrent	Ip	100	mA
Storage temperature	Tstg	-60~125	℃
Operating temperature	T	-40~85	℃
Soldering temperature	Tp	260	℃

*Pin soldering only, 5s

Technical indicators	Symbol	Min	Typ	Max	Unit
Operating Voltage	Vop	0	5	VBR-5	V
Spectral range	△λ	900		1700	nm
Responsiveness	R1064	0.60	0.65		A/W
Responsiveness	R1550	0.95	1.05		A/W

Application

● Photoelectric alarm

● Optical power meter

● Instrumentation

● Lidar

Φ1~5mm Low capacitance and Large Active Area InGaAs PD Chips

Product model

Parameter

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