800-1700nm InGaAs Amplified Photodetector

The InGaAs Amplified Photodetector has a photosensitivity range of 800nm~1700nm, fixed gain, and can achieve quantitative photoelectric conversion. It has sufficient gain while ensuring high bandwidth performance. It is suitable for the development of photoelectric detection applications with weak light intensity and fast speed. It has excellent performance and high cost performance, provides all-round technical support, and is often used in near-infrared light measurement.

Name	Model	Description	Price

Parameter

Features

● Sensing range of 800nm to 1700nm, often used in near-infrared light measurements

● Amplified detector, fixed gain, quantitative photoelectric conversion

● With sufficient gain

● At the same time, it guarantees high bandwidth performance and is suitable for the development of photoelectric detection applications with weak light intensity and fast speed

● Excellent performance, high cost performance, and comprehensive technical support

● Provide non-standard customization services

Key Parameter

Parameters	Value
Wavelength range	800-1700nm				900-2600nm
Photosensitive size	Φ0.5mm	Φ150um	Φ0.5mm	Φ2.0mm	Φ1.0mm
Bandwidth range	DC～150MHz	DC～380MHz	DC～20MHz	DC～5MHz	DC～25MHz
Gain	Hi-Z Load:10kV/A； 50Ω Load:5kV/A	Hi-Z Load: 5×104V/A； 50Ω Load:2.5×104V/A	1×1011V/A±10%	Hi-Z Load:500kV/A； 50Ω Load: 175kV/A	Hi-Z Load: 1×104V/A； 50Ω Load:5×103V/A
Signal Amplitude	Hi-Z Load: 0～10V； 50Ω Load: 0～5V	Hi-Z Load: 0～10V； 50Ω Load: 0～5V	0~10V	Hi-Z Load:0～10V； 50Ω Load:0~3.5V	Hi-Z Load: 0～10V； 50Ω Load: 0～5V
NEP	1.2×10^-11W/Hz^1/2	1.0 × 10^-13W/Hz^1/2	2×10^-14W/Hz^1/2	2.2×10^-11W/Hz^1/2	1.1×10^-11W/Hz^1/2
Sensitive Surface depth	0.13" (3.3 mm)	0.16" (4.1 mm)	0.07" (1.8 mm)	0.15" (3.7 mm)	0.09" (2.2mm)
Operating temperature	10-40℃		10-50℃
Storage temperature	-20-70℃	-25-70℃
Detector Net Weight	0.10kg			0.06kg	0.10kg
Appearance Dimensions	2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm)	2.79" X 1.96" X 0.89" (70.9 mm X 49.8 mm X 22.5 mm)	2.79" X 1.96" X 0.89" (70.9 mm X 49.9 mm X 22.5 mm)	2.79" X 1.96" X 0.8" (70.9 mm X 49.9 mm X 22.5 mm)	2.79" X 1.96" X 0.89" (70.9 mm X 49.8 mm X 22.5 mm)
Power Interface	Power supply	Power Switch	Signal Interface	Mounting Interface	Optical Interface
LUMBERG R SMV3 FEMA LE	LDS12B(DP), ±12 VDC regulated linear power supply, 6W, 220VAC	Sliding Switch With LED Indicator	BNC Female socket	M4×2	SM1× 1 SM0.5 × 1

Responsivity Curve

Dimension

Unit (mm)

Product Configurations：

Attachment 1: Optional Configuration Table

Silicon-based amplified photodetector	Optional Configurations
Product Name	Material	Type	Features	Wavelength Range Sensitive Area	Reserved Optional Configurations
PD: "Photodetector"	J: InGaAs	A: Amplified Type	F: Fixed gain	8J5：800-1700nm，Φ0.5mm	-s: 800-1700nm, Φ0.5mm for extremely weak light measurement
				8J015：800-1700nm，Φ150um
				8J20： 800-1700nm，Φ2.0mm
				9O10：900-2600nm，Φ1.0mm

Attachment 2: Model and Part Number Cross-reference Table

Model	Part Number	Specs
PDJAF8J5	A80153440	800-1700nm InGaAs Amplified Photodetector, Photosensitive Area Φ0.5mm, Fixed gain 10kV/A, Bandwidth Range DC ～150MHz, Fast low-light measurement
PDJAF8J5-S	A80153441	800-1700nm InGaAs Amplified Photodetector, Photosensitive Area Φ0.5mm, Fixed gain 1x10¹¹V/A±10%, Bandwidth Range DC ～20MHz, Extremely weak light measurement
PDJAF8J015	A80153442	800-1700nm InGaAs Amplified Photodetector, Photosensitive Area Φ150mm, Fixed gain 5x10⁴V/A, Bandwidth Range DC～380MHz, Fast low-light measurement
PDJAF8J20	A80153443	800-1700nm InGaAs Amplified Photodetector, Photosensitive Area Φ2.0mm, Fixed gain 500kV/A , Bandwidth Range DC ～5MHz, Large target surface
PDJAF9O10	A80153444	900-2600nm InGaAs Amplified Photodetector, Photosensitive Area Φ1.0mm, Fixed gain 1x10⁴V/A, Bandwidth Range DC ～25kHz, Infrared extension

Application

● Near-infrared light measurement

800-1700nm InGaAs Amplified Photodetector

Product model

Parameter

Related