110 GHz Photodetector Chip     


High-speed photodetector modules are of interest for the development of next.generation optical communication linksin datacom and telecom. Since these R&D links are always a step ahead interms of symbol rates, photodetector modules with a RF bandwidth beyond state-of-the-art are needed at the receiver side. Furthermore, the high-speed performance of the photodetector modules makes them applicable to microwave photonics.

The photodetector chips inside the modules are based on mature InP technology and are fabricated at the wafer process line of offering Telcordia and space-qualifiedprocesses. The chips are packaged atFraunhofer HHl facilities.



Product model


Name Model Price
110 GHz Photodetector Chip   [PDF]  [RFQ]

HSC110GHZ
(Stock NO. Not entered)
[Please inquire]

Parameter


Features

● Up to 100 GHz 3 dB-bandwidth

● Detection of 128 GBaud amplitudemodulated signals

● Operation in O-band and C+L-band

● Integrated bias network

● Low bias operation

Specifications

Test conditions: 25 °C, unless otherwise specified

Parameters

Symbol

Test condition

Min.

Typ.

Max.

Unit

Operating Temperature

T0


0


75

Storage Temperature

Ts


-40


85

Operating Wavelength

λ


1550

nm

Bias Voltage

Vb



4


V

Active Area Diameter

Ф



10


μm

Saturation Optical Power

Ps

λ = 1550 nm, Vb= 5   V

13

dBm

Responsivity

R

λ = 1550 nm, Vb= 5   V


0.45


A/W

Dark Current

Id

Vb= 5 V


30


nA

3dB Bandwidth

BW

Ps,o = 5 mW, Vb= 4 V

100

110


GHz


Bandwidth and Responsivity value test

110GHz 1.png


Application

● Data communication

● Tele communication

● Systems measurement & -test

● Photonics microwave

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