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    • 30GHz 850nm Photodetector     


    This product is a high-performance photodetector designed for optical-to-electrical conversion in the 850 nm wavelength band. It features a built-in bias-T circuit, a 3-dB bandwidth of ≥30 GHz, and a responsivity of ≥0.4 A/W. This product is suitable for applications in 850 nm optical communications, advanced instrumentation, and related technical fields.



    Product model


    Name Model Price
    30GHz 850nm Photodetector   [PDF]  [RFQ]

    WOERBPL85B30
    (Stock NO. Not entered)     		[Please inquire]
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    Parameter


    Features

    ● Wide bandwidth

    ● Low dark current

    ● High reliability

    Specifications

    Product Specifications (All tests are conducted at 25℃ unless otherwise noted)

    Parameter

     Symbol

     Test Condition

     Min

     Typ

     Max

     Unit

    Operating Wavelength

     λ


    800

    850

    910

     nm

    Responsivity

     R

     λ = 850 nm

    0.4

    0.45


     A/W

    Dark Current

     Id

     Vr = +4 V


    10


     nA

    3 dB Bandwidth

     BW

     Popt = 0 dBm

    30



     GHz

    Saturation Optical Power

     Psat



    8


     dBm


    Maximum Absolute Ratings

    Parameter

     Symbol

     Rating

     Unit

    Optical Power

     Ps

    13

     dBm

    Reverse Voltage

     Vr

    10

     V

    Operating Temperature

     Top

     -40~+70

     ℃

    Storage Temperature

     Tstg

     -55~+85

     ℃


    Testing Curve

    30Ghz852.png




    Dimensions and Pin definitions

    unit (mm)

    30Ghz851.png

    Precautions for Use

    ● Appropriate ESD protection measures should be taken to avoid electrostatic damage.

    ● Do not pull the fiber pigtail directly to prevent damage to the device.

    ● Keep the optical connector clean to avoid dust or other contaminants that may affect performance.



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