Si APD Photodetector Module

Overview
Features
Specifications
Application

The Si avalanche photodetector module integrates a low-noise APD, a low-noise broadband transimpedance amplifier, an ultra-low-noise isolated power supply, a high-voltage supply, and APD temperature compensation. The isolated power supply ensures that the output signal is not affected by external power sources, while the APD temperature compensation enhances the stability of the detector module. The avalanche photodetector features high gain, high sensitivity, wide bandwidth, and low noise.

Product model

Name	Model	Description	Parameter	Price
2GHz Si APD Photodetector Module [PDF] [RFQ]	APD-2G-C	Response wavelngth 400-1100nm, Bandwidth 2GHz, Material Si, Detector response 0.55A/W@850nm, Optical Input FC/APC	Response wavelength: 400-1100nm Bandwidth: 2GHz Lead Time: 2-3 weeks	[Please inquire] Call us
1GHz Si APD Photodetector Module [PDF] [RFQ]	APD-1G-C	Response wavelngth 400-1100nm, Bandwidth 1GHz, Material Si, Detector response 0.55A/W@850nm, Optical Input FC/APC	Response wavelength: 400-1100nm Bandwidth: 1GHz Lead Time: 2-3 weeks	[Please inquire] Call us
500MHz Si APD Photodetector Module [PDF] [RFQ]	APD-500M-C	Response wavelngth 400-1100nm, Bandwidth 500MHz, Material Si, Detector response 0.55A/W@850nm, Optical Input FC/APC	Response wavelength: 400-1100nm Bandwidth: 500MHz Lead Time: 2-3 weeks	[Please inquire] Call us
400MHz Si APD Photodetector Module [PDF] [RFQ]	APD-400M-C	Response wavelngth 400-1100nm, Bandwidth 400M, Material Si, Detector response 0.55A/W@850nm, Optical Input FC/APC	Response wavelength: 400-1100nm Bandwidth: 400MHz Lead Time: 2-3 weeks	[Please inquire] Call us
300MHz Si APD Photodetector Module [PDF] [RFQ]	APD-300M-C	Response wavelngth 400-1100nm, Bandwidth 300MHz, Material Si, Detector response 0.55A/W@850nm, Optical Input FC/APC	Response wavelength: 400-1100nm Bandwidth: 300MHz Lead Time: 2-3 weeks	[Please inquire] Call us
200MHz Si APD Photodetector Module [PDF] [RFQ]	APD-200M-C	Response wavelngth 400-1100nm, Bandwidth 200MHz, Material Si, Detector response 0.55A/W@850nm, Optical Input FC/APC	Response wavelength: 400-1100nm Bandwidth: 200MHz Lead Time: 2-3 weeks	[Please inquire] Call us
100MHz Si APD Photodetector Module [PDF] [RFQ]	APD-100M-C	Response wavelngth 400-1100nm, Bandwidth 100MHz, Material Si, Detector response 0.55A/W@850nm, Optical Input FC/APC	Response wavelength: 400-1100nm Bandwidth: 100MHz Lead Time: 2-3 weeks	[Please inquire] Call us

Parameter

Features

● Low noise

● High gain

● Built-in high-voltage power supply

● APD temperature compensation

● Compact structure

● Built-in low-noise isolated power supply

Specifications

Product PN#	APD-100M-C	APD-200M-C	APD-300M-C	APD-400M-C	APD-500M-C	APD-1G-C	APD-2G-C	Unit
Detector Type	Si
Wavelength	400~1100							nm
Bandwidth	100M	200M	300M	400M	500M	1G	2G	Hz
Detector Responsivity	0.55	0.55	0.55	0.55	0.55	0.55	0.55	A/W@850nm
Transimpedance Gain	300K	300K	300K	300K	300K	300K	300K	V/W
Output Impedance	50	50	50	50	50	50	50	Ω
Saturation power	13	13	13	13	13	13	30	uW
NEP	0.18	0.18	0.18	0.18	0.18	0.2	0.2	pW/√(Hz)
Output Coupling Mode	DC/AC	DC/AC	DC/AC	DC/AC	DC	AC	AC
Supply Voltage	5	5	5	5	5	12	12	V
Supply Current	0.5(max)	0.5(max)	0.5(max)	0.5(max)	0.5(max)	0.5(max)	0.5(max)	A
Optical input	FC/APC(Free Space optional)
Radio Frequency Output	SMA
Dimensions	655025							mm