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    • Ф1.8mm 905nm Silicon avalanche photodiode     


    Si avalanche Photodetector module integrates low-noise APD detector, low-noise broadband transimpedance amplifier, ultra-low noise isolation power supply, high-voltage power supply; isolation power supply ensures that the output signal is not affected by external power supply; APD temperature compensation improves the stability of detection module. Avalanche photodetectors are characterized by high gain, high sensitivity, high bandwidth and low noise.



    Product model


    Name Model Price
    Ф1.8mm 905nm Silicon avalanche photodiode   [PDF]  [RFQ]

    MP-Si-1.8-TO5
    Stock NO.: E80040365     		[Please inquire]
     Call us 

    Parameter


    Features

    ● Top illumination planar APD

    ● High operation frequency, High multiplication gain

    ● Laser range finder,Laser alarming, RADAR, etc. application.

    E/O Characteristics

    The opto-eletronic characteritics  (@Tc=22±3℃)

    Parameters

    Sym.

    Test conditions

    Min

    Typ

    Max

    Unit

    Response Spectrum

    λ

    —

    400～1100

    nm

    Active diameter

    φ

    —

    1800

    μm

    Reponsivity

    Re

    λ=905nm,φe=1μw,   M=100

    50

    55


    A/W

    Response time

    Ts

    f=1MHz,RL=50Ω,λ=905nm


    1.0


    ns

    Dark current

    ID

    M=100


    3.0

    8.0

    nA

    Total capacitance

    Ctot

    M=100,f=1MHz


    8.0


    pF

    Reverse breakdown voltage

    VBR

    IR=10uA

    120


    220

    V

    Operating voltage temperature coefficient

    δ

    Tc=-40℃～85℃


    1.1


    V/℃


    The absolute values

    Operating voltage

    0.95×VBR

    Operating temperature

    -50～85℃

    Power dissipation

    1mW

    Forward current

    1mA

    storage temperature

    -55～100℃

    Soldering temperature(time)

    260℃(10s)


    The typical characteristical curve

    f1.png  

    Figure1. Responsivity vs. Wavelength at 0v 


    f2.png

    Figure2.  Gain vs. UR/UBR  


    f3.png       

    Figure3. Dark Current vs. UR/UBR 


      f4.png 

    Figure4. Capacitance vs. Operating voltage


    The application electric circuit

    Figure5. Equivalent Circuit Diagram 


     

     Figure6. optical Drawing

    Note ：

    C1 - filter capacitor, mainly to filter out the noise of the bias working voltage VR; 

    C2 - bypass capacitor, mainly to provide a ground loop for the AC signal;

    R1 - current limiting resistor, mainly to protect the detector from being damaged when the bias working voltage VR is too high;

    Ri-sampling resistor, which converts the photocurrent into a voltage signal.

    Dimensions and Pin definitions

    f5.png

    The cautions

    1.The suitable ESD protecting measures are recommend in storage,transporting and using.

    Application

    ● Optical Fiber Sensing

    ● Optical Fiber Communication

    ● Laser Ranging

    ● Spectrometry



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