Ф1.8mm 905nm Silicon avalanche photodiode


Active area 1.8mm ; Response Spectrum 400-1100nm, Material Si, Response time 1.0 ns, TO5 packag

Part Number  :  MP-Si-1.8-TO5
Unit Price  :  USD [Please inquire]
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Inventory quantity   :   [Please inquire]
Stock NO.   :  E80040365
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The product is a silicon PIN photodiode, which works under reverse bias condition. The peak wavelength is about 940nm, and the spectrum detection range is from 400 nm to 1100 nm.

The opto-eletronic characteritics  (@Tc=22±3℃)

Parameters

Sym.

Test conditions

Min

Typ

Max

Unit

Response Spectrum

λ

4001100

nm

Active diameter

φ

1800

μm

Reponsivity

Re

λ=905nm,φe=1μw,   M=100

50

55


A/W

Response time

Ts

f=1MHz,RL=50Ω,λ=905nm


1.0


ns

Dark current

ID

M=100


3.0

8.0

nA

Total capacitance

Ctot

M=100,f=1MHz


8.0


pF

Reverse breakdown voltage

VBR

IR=10uA

120


220

V

Operating voltage temperature coefficient

δ

Tc=-40℃~85℃


1.1


V/℃


The absolute values

Operating voltage

0.95×VBR

Operating temperature

-50~85℃

Power dissipation

1mW

Forward current

1mA

storage temperature

-55~100℃

Soldering temperature(time)

260℃(10s)


The typical characteristical curve

f1.png  

Figure1. Responsivity vs. Wavelength at 0v 


f2.png

Figure2.  Gain vs. UR/UBR  


f3.png       

Figure3. Dark Current vs. UR/UBR 


  f4.png 

Figure4. Capacitance vs. Operating voltage


The application electric circuit

Figure5. Equivalent Circuit Diagram 


 

 Figure6. optical Drawing

Note :

C1 - filter capacitor, mainly to filter out the noise of the bias working voltage VR; 

C2 - bypass capacitor, mainly to provide a ground loop for the AC signal;

R1 - current limiting resistor, mainly to protect the detector from being damaged when the bias working voltage VR is too high;

Ri-sampling resistor, which converts the photocurrent into a voltage signal.



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