Active area 1.8mm ; Response Spectrum 400-1100nm, Material Si, Response time 1.0 ns, TO5 packag
Part Number : MP-Si-1.8-TO5 |
Unit Price : USD [Please inquire] |
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Stock NO. : E80040365 |
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The product is a silicon PIN photodiode, which works under reverse bias condition. The peak wavelength is about 940nm, and the spectrum detection range is from 400 nm to 1100 nm.
The opto-eletronic characteritics (@Tc=22±3℃)
Parameters | Sym. | Test conditions | Min | Typ | Max | Unit |
Response Spectrum | λ | — | 400~1100 | nm | ||
Active diameter | φ | — | 1800 | μm | ||
Reponsivity | Re | λ=905nm,φe=1μw, M=100 | 50 | 55 | A/W | |
Response time | Ts | f=1MHz,RL=50Ω,λ=905nm | 1.0 | ns | ||
Dark current | ID | M=100 | 3.0 | 8.0 | nA | |
Total capacitance | Ctot | M=100,f=1MHz | 8.0 | pF | ||
Reverse breakdown voltage | VBR | IR=10uA | 120 | 220 | V | |
Operating voltage temperature coefficient | δ | Tc=-40℃~85℃ | 1.1 | V/℃ |
The absolute values
Operating voltage | 0.95×VBR | Operating temperature | -50~85℃ | Power dissipation | 1mW |
Forward current | 1mA | storage temperature | -55~100℃ | Soldering temperature(time) | 260℃(10s) |
The typical characteristical curve
Figure1. Responsivity vs. Wavelength at 0v
Figure2. Gain vs. UR/UBR
Figure3. Dark Current vs. UR/UBR
Figure4. Capacitance vs. Operating voltage
The application electric circuit
Figure5. Equivalent Circuit Diagram
Figure6. optical Drawing
Note :
C1 - filter capacitor, mainly to filter out the noise of the bias working voltage VR;
C2 - bypass capacitor, mainly to provide a ground loop for the AC signal;
R1 - current limiting resistor, mainly to protect the detector from being damaged when the bias working voltage VR is too high;
Ri-sampling resistor, which converts the photocurrent into a voltage signal.