Φ1~3mm Extended InGaAs Photodiodes

LD-PD-3000E Extended InGaAs Photodiodes, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 2200 nm.

Name	Model	Description	Parameter	Price
1mm Extended InGaAs Photodiodes [PDF] [RFQ]	PL-2200-IG-AR1-TO46 Stock NO.: E80042045	Response wavelength 900~2200nm, Material InGaAs, Active area 1mm, TO46 Package	Response wavelength: 900-2200nm Material: InGaAs Active area: 1mm Package: TO-46 Lead Time: in stock	[Please inquire] Call us
2mm Extended InGaAs Photodiodes [PDF] [RFQ]	PL-2200-IG-AR2-TO5 Stock NO.: E80042046	Response wavelngth 900~2200nm, Material InGaAs, Active area 2mm, TO5 Package	Response wavelength: 900-2200nm Material: InGaAs Active area: 2mm Package: TO-5 Lead Time: in stock	[Please inquire] Call us
3mm Extended InGaAs Photodiodes [PDF] [RFQ]	PL-2200-IG-AR3-TO5 Stock NO.: E80042047	Response wavelngth 900~2200nm, Material InGaAs, Active area 3mm, TO5 Package	Response wavelength: 900-2200nm Material: InGaAs Active area: 3mm Package: TO-5 Lead Time: in stock	[Please inquire] Call us

Name

Model

Description

Parameter

Price

1mm Extended InGaAs Photodiodes [PDF] [RFQ]

PL-2200-IG-AR1-TO46
Stock NO.: E80042045

Response wavelength 900~2200nm, Material InGaAs, Active area 1mm, TO46 Package

Response wavelength: 900-2200nm

Material: InGaAs

Active area: 1mm

Package: TO-46

Lead Time: in stock

[Please inquire]

Call us

2mm Extended InGaAs Photodiodes [PDF] [RFQ]

PL-2200-IG-AR2-TO5
Stock NO.: E80042046

Response wavelngth 900~2200nm, Material InGaAs, Active area 2mm, TO5 Package

Response wavelength: 900-2200nm

Material: InGaAs

Active area: 2mm

Package: TO-5

Lead Time: in stock

[Please inquire]

Call us

3mm Extended InGaAs Photodiodes [PDF] [RFQ]

PL-2200-IG-AR3-TO5
Stock NO.: E80042047

Response wavelngth 900~2200nm, Material InGaAs, Active area 3mm, TO5 Package

Response wavelength: 900-2200nm

Material: InGaAs

Active area: 3mm

Package: TO-5

Lead Time: in stock

[Please inquire]

Call us

Parameter

Features

● Top illumination planar PD

● Narrow Element gap,

● Low Crosstalk,High reliability

● Good Reponsivity homogeneity of each Quadrant

E/O Characteristics

Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)

Parameters	Sym.	Min	Typ	Max	Unit
Peak Wavelength (typ)	λ	900~2200			nm
Active diameter	φ	3000			um
Responsivity @λP(min/typ)	Re	0.9	1.0		A/W
Shunt Resistance (min/typ)		2k	6k		Ω
Dark Current (max) @ 1V				100	uA
Capacitance (typ) @ 0V			8000		pF
Bandwidth w/ 50Ω@ 0 V (typ)			0.397		MHz
Rise time w/ 50Ω@ 0 V (typ)			881		ns
NEP @λ_PEAK (typ)			287 x 10^-14		W/Hz^1/2
Linearity (±0.2 dB @ 0 V)			6		dBm
Case Style			TO-5

Typical characteristical curve

Relative Responsivity(X100%)

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Application electric circuit

Dimensions and Pin definitions

Absolute Maximem Ratings

Item	Symbol	Unit	Min	Typ	Max
Storage Temperature	T_stg	℃	-40	-	125
Operating Temperature	T_OP	℃	-40	-	85
Reverse Voltage	V_PD	V	1
Reverse Current	I_PR	mA	10
Forward Current	I_PF	mA	10
Power Dissipation		mW	50

Application

● Laser guidance

● Laser positioning

● Laser navigation

● Laser range finder

Ordering Info

PL-W□□□□-☆-AR▽-XX

W□□□□: Cut off Wavelength

400: 400nm

900: 900nm

1700: 1700nm

2100: 2100nm

2400: 2400nm

2700: 2700nm

☆ : Material

IG: InGaAs

Si: Si

▽: Active Area

1: 1mm

2: 2mm

….

5: 5mm

XX: Package/Fiber and Connector Type

TO: TO5 Package

FSA=SMF-28E Fiber coupled+ FC/APC

FSP=SMF-28E Fiber coupled + FC/PC

FPP=PM Fiber Fiber coupled + FC/PC

FPA=PM Fiber Fiber coupled + FC/APC

User Safety

Safety and Operating Considerations

This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.

Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.

ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.

Φ1~3mm Extended InGaAs Photodiodes

Product model

Parameter

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