Features
● High Power（Kink off power up to 1500mw）
● High electro-optic conversion efficiency
● High single-mode operation stability
● High reliability
E/O Characteristics
Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)
Parameter | Symbol | Min | Typ | Max | Unit |
Centre Wavelength | λ | 970 | 976 | 980 | nm |
Spectrum Width | FWHM | - | 1 | 2 | nm |
Threshold Current | Ith | 60 | 70 | 80 | mA |
Operating Current | Iop |
| 1500 | 1800 | mA |
Chip output Power | Pf | 1500 | 1800 |
| mW |
Forward Voltage | Vf |
| 1.72 | 1.75 | V |
Kink deviation | KINK | 30% |
Beam divergence angle (parallel) | ϑ// |
| 7 |
| Deg |
Beam Divergence angle (perpendicular) | ϑ⊥ |
| 22 |
| Deg |
Note: These parameters were obtained by testing COS packaged products in the CW mode at 25℃.
L-I-V Curve
Typical Testing Curve
Package Size
Unit (mm)
Dimension | Symbol | Min Value | Typ Value | Max Value | Unit |
Emitter Area | - |
| 5X1 | - | um |
Chip width | W | 380 | 400 | 420 | um |
Chip Length | L | 4950 | 5000 | 5050 | um |
Chip Thickness | H | 105 | 120 | 135 | um |
Absolute Maximum Ratings
Item | Unit | Min | Typ | Max |
Case Temperature | ℃ | -5 | 25 | 50 |
Chip Temperature | ℃ | +10 | 25 | 50 |
Operating Current | mA | 0 | 1800 | 2000 |
Forward Voltage | V | 0.8 | 1.2 | 3.0 |
Back Current | uA | - | - | 10 |
Back Voltage | V | - | - | 2.0 |
Suggest TEC Current | A | - | - | 1.2 |
ESD Voltage | V | 1000 | - | - |
Reverse Voltage(PD) | V | - | - | 20 |
Note：
1. Stresses which exceed the absolute maximum ratings can cause permanent damage to the device.
2. These are only absolute stress ratings . Functional operation of the device is not implied at conditions exceeding those given in the operational sections of the data sheet.
3. Exposure to absolute maximum ratings for extended periods can affect device reliability adversely.
Handling Procedures
1. Suggested bonding condition
● Bonding temperature: 350℃
● Bonding force: 30 grams (not exceed 40 grams)
● Bonding force and temperature should be applied in a gradual fashion
● Bonding time: <= 10 seconds
2. Suggested burn-in conditions:
Conditions 1：
● Chip heatsink temperature: 100℃
● Current: 100mA
● Time: 24 hours
● Pass Criteria: BI 0hrs LIV1；BI 24hrs LIV2 Compare LIV2 to LIV1
● Delta Ith (T=25℃) ≤1mA and Delta Pf(T=25℃) ≤10%
Conditions 2：
● Chip heatsink temperature: 100℃
● Current: 100mA
● Time: 24 hours+48hrs
● Pass Criteria: BI 24hrs LIV1；BI 24hrs+48hrs LIV2 Compare LIV2 to LIV1
● Delta Ith (T=25℃) ≤0.7mA and Delta Pf(T=25℃) ≤5%
