LD-PD's InGaAs pin structure based on InP by MOCVD method and planar diffusing technology. The sensitive areas of TO photodiode series products are φ5mm、φ10mm、φ15mm respectively. The products with other sensitive area, shape or package style can also be provided according to the demand of users.
| Name | Model | Description | Parameter | Price |
|---|
● 15mm Active diameters
● High responsivity
● Low capacitance
● Low dark current
● High shunt resistance
Parameters (Tc=25℃)
PARAMETER | SYMBOL | MIN | TYP | MAX | UNIT | TEST CONDITIONS |
Response range | λ | 900 | 1650 | nm | ||
Responsivity | R | 0.85 | 0.9 | A/W | λ = 1310 nm | |
0.95 | λ = 1550 nm | |||||
0.2 | λ = 850 nm | |||||
Dark current | I_D | 40 | 150 | nA | V_R = -2 V | |
Capacitance | C | 60 | nF | V_R = -2 V, f = 1 MHz |
Absolute Maximum Ratings
PARAMETER | SYMBOL | VALUE | UNIT |
Reverse voltage | VRmax | 5 | V |
Forward current | — | 10 | mA |
Operating temperature | Topr | -40 to +85 | ℃ |
Storage temperature | Tstg | -55 to +125 | ℃ |
Dimensions Diagram (mm)

Dimension Parameter
PARAMETER | SYMBOL | VALUE | UNIT |
Active area diameter | D | 15 | mm |
Bond pad diameter | — | 200 | µm |
Die size | — | 15.3 × 15.3 | mm |
Die thickness | t | 180 ± 20 | µm |
Precautions for use
This chip is susceptible to damage as a result of ESD. Use of ground straps, antistatic mats, and other standard ESD protective equipment is requisite when handling or testing an InGaAs or GaAs PIN/APD chip.
● Monitoring
● Fiber-optic Instruments
● Data Communications