15mm Large Area InGaAs/InP PIN Photodiode Chip     


LD-PD's  InGaAs pin structure based on InP by MOCVD method and planar diffusing technology. The sensitive areas of TO photodiode series products are φ5mm、φ10mm、φ15mm respectively. The products with other sensitive area, shape or package style can also be provided according to the demand of users.



Product model


Name Model Price
15mm Large Area InGaAs/InP PIN Photodiode Chip   [PDF]  [RFQ]

LP-PD-D15
Stock NO.: 2
[Please inquire]

Parameter


Features

● 15mm Active diameters

● High responsivity

● Low capacitance

● Low dark current

● High shunt resistance

Specifications

Parameters (Tc=25℃)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

TEST CONDITIONS

Response range

λ

900


1650

nm


Responsivity

R

0.85

0.9


A/W

λ = 1310 nm


0.95


λ = 1550 nm


0.2


λ = 850 nm

Dark current

I_D

40


150

nA

V_R = -2 V

Capacitance

C


60


nF

V_R = -2 V, f = 1 MHz


Absolute Maximum Ratings

PARAMETER

SYMBOL

VALUE

UNIT

Reverse voltage

VRmax

5

V

Forward current

10

mA

Operating temperature

Topr

-40 to +85

Storage temperature

Tstg

-55 to +125

Dimension

Dimensions Diagram (mm)

15.png


Dimension Parameter

PARAMETER

SYMBOL

VALUE

UNIT

Active area diameter

D

15

mm

Bond pad diameter

200

µm

Die size

15.3 × 15.3

mm

Die thickness

t

180 ± 20

µm


Precautions for use

This chip is susceptible to damage as a result of ESD. Use of ground straps, antistatic mats, and other standard ESD protective equipment is requisite when handling or testing an InGaAs or GaAs PIN/APD chip.

Application

● Monitoring

● Fiber-optic Instruments

● Data Communications

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