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    • 15mm Large Area InGaAs/InP PIN Photodiode Chip


    Response wavelngth 900-1650nm, responsivity: 0.9A/W@1.31µm or 0.95A/W@1.55µm, Material InGaAs/InP, Active area Diameter 15mm, Die Package, （Min Order:100PCS）

    Part Number  :  LP-PD-D15
    Unit Price  :  USD [Please inquire]
    Lead time  :  in stock
    Inventory quantity   :   [Please inquire]
    Stock NO.   :  2
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    Recommended

    LD-PD's  InGaAs pin structure based on InP by MOCVD method and planar diffusing technology. The sensitive areas of TO photodiode series products are φ5mm、φ10mm、φ15mm respectively. The products with other sensitive area, shape or package style can also be provided according to the demand of users.

    Parameters (Tc=25℃)

    PARAMETER

    SYMBOL

    MIN

    TYP

    MAX

    UNIT

    TEST CONDITIONS

    Response range

    λ

    900


    1650

    nm


    Responsivity

    R

    0.85

    0.9


    A/W

    λ = 1310 nm


    0.95


    λ = 1550 nm


    0.2


    λ = 850 nm

    Dark current

    I_D

    40


    150

    nA

    V_R = -2 V

    Capacitance

    C


    60


    nF

    V_R = -2 V, f = 1 MHz


    Absolute Maximum Ratings

    PARAMETER

    SYMBOL

    VALUE

    UNIT

    Reverse voltage

    VRmax

    5

    V

    Forward current

    —

    10

    mA

    Operating temperature

    Topr

    -40 to +85

    ℃

    Storage temperature

    Tstg

    -55 to +125

    ℃

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