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  • 1310nm 100Gb/s InGaAs 1×4 Array Photodetector Chip

    • 1310nm 100Gb/s InGaAs 1×4 Array Photodetector Chip     


    This product is a 1310nm 100Gb/s InGaAs 1×4 array photodetector chip that performs photoelectric conversion and is suitable for applications in data communication, microwave photonics, and related fields.



    Product model


    Name Model Price

    Parameter


    Features

    ● Low capacitance

    ● Low dark current

    ● High responsivity

    Specifications

    Test conditions: 25 °C, unless otherwise specified

    Parameters

    Symbol

    Test condition

    Min

    Typ

    Max

    Unit

    Operating   Temperature

    T0


    0


    75

    ℃

    Storage Temperature

    Ts


    -40


    85

    ℃

    Operating   Wavelength

    λ



    1310


    nm

    Bias Voltage

    Vb



    3

    6

    V

    Active Area Diameter

    Ф



    20


    μm

    Responsivity

    R

    λ = 1550 nm, Vb= 3 V


    0.76


    A/W

    Dark Current

    Id

    Vb= 3 V


    0.2

    1.0

    nA

    Capacitance

    C

    Vb= 3 V


    80


    fF

    Series Resistance

    Rs



    10


    Ω

    3 dB Bandwidth (50Ω Load)

    BW

    Ps,o = 0 dBm, Vb= 3 V


    24


    GHz

    Dimensions and Pin definitions


    1310nm 100Gb.png


    Outline

    Min

    Typ

    Max

    Unit

    Length

    1050

    1100

    1150

    μm

    Width

    240

    290

    340

    μm

    Thickness

    140

    150

    160

    μm


    Precautions for Use

    ● Necessary ESD protection measures should be taken to prevent the chip from electrostatic damage.

    ● Extreme care is required when handling the chip, and vacuum suction is recommended for chip handling.

    ● Parameters such as wire bonding force and temperature must be set carefully to avoid damaging the chip.




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