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    • 1310nm 100Gb/s InGaAs 1×4 Array Photodetector Chip


    Operating Wavelength 1310nm, Active Area Diameter 20μm, Reponsivity ≥0.76 A/W@1.55μm, 3 dB Bandwidth (50Ω TIA) 24GHz, MOQ:20 PCs

    Part Number  :  APC-1310-1x4-100
    Unit Price  :  USD [Please inquire]
    Lead time  :   [Please inquire]
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    This product is a 1310nm 100Gb/s InGaAs 1×4 array photodetector chip that performs photoelectric conversion and is suitable for applications in data communication, microwave photonics, and related fields.

    Test conditions: 25 °C, unless otherwise specified

    Parameters

    Symbol

    Test condition

    Min

    Typ

    Max

    Unit

    Operating   Temperature

    T0


    0


    75

    ℃

    Storage Temperature

    Ts


    -40


    85

    ℃

    Operating   Wavelength

    λ



    1310


    nm

    Bias Voltage

    Vb



    3

    6

    V

    Active Area Diameter

    Ф



    20


    μm

    Responsivity

    R

    λ = 1550 nm, Vb= 3 V


    0.76


    A/W

    Dark Current

    Id

    Vb= 3 V


    0.2

    1.0

    nA

    Capacitance

    C

    Vb= 3 V


    80


    fF

    Series Resistance

    Rs



    10


    Ω

    3 dB Bandwidth (50Ω Load)

    BW

    Ps,o = 0 dBm, Vb= 3 V


    24


    GHz


    Download

    1310nm 100Gb-s InGaAs 1×4 Array Photodetector Chip .pdf


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