350-1100nm silicon-based biased photodetector

LD-PD PTE.LTD's silicon-based biased photodetector has a sensitive range of 200nm~1100nm, with extremely low noise, fast response, no gain, and low cost. It is suitable for conventional photodetection applications, has excellent performance, and is cost-effective. It provides full technical support and is often used in ultraviolet and visible light measurements.

Name	Model	Description	Parameter	Price
320-1100nm silicon-based biased photodetector [PDF] [RFQ]	PDSBC3D100 Stock NO.: A80153423	Spectral Response 320-1100nm; photosensitive size Φ10.0mm, rise time 35ns, bandwidth 10MHz	Response wavelength: 320–1100nm Active area: 10mm Bandwidth: 10MHz Lead Time: 3-4 weeks	[Please inquire] Call us
350-1100nm silicon-based biased photodetector [PDF] [RFQ]	PDSBC3E36 Stock NO.: A80153422	Spectral Response 350-1100nm; photosensitive size Φ3.6mm, rise time 14ns, bandwidth 25 MHz	Response wavelength: 350–1100nm Active area: 3.6mm Bandwidth: 25MHz Lead Time: 3-4 weeks	[Please inquire] Call us
200-1100nm silicon-based biased photodetector [PDF] [RFQ]	PDSBC2B10 Stock NO.: A80153421	Spectral Response 200-1100nm; photosensitive size Φ1.0mm, rise time 1ns, bandwidth 350 MHz	Response wavelength: 200–1100nm Active area: 1mm Bandwidth: 350MHz Lead Time: 3-4 weeks	[Please inquire] Call us

Name

Model

Description

Parameter

Price

320-1100nm silicon-based biased photodetector [PDF] [RFQ]

PDSBC3D100
Stock NO.: A80153423

Spectral Response 320-1100nm; photosensitive size Φ10.0mm, rise time 35ns, bandwidth 10MHz

Response wavelength: 320–1100nm

Active area: 10mm

Bandwidth: 10MHz

Lead Time: 3-4 weeks

[Please inquire]

Call us

350-1100nm silicon-based biased photodetector [PDF] [RFQ]

PDSBC3E36
Stock NO.: A80153422

Spectral Response 350-1100nm; photosensitive size Φ3.6mm, rise time 14ns, bandwidth 25 MHz

Response wavelength: 350–1100nm

Active area: 3.6mm

Bandwidth: 25MHz

Lead Time: 3-4 weeks

[Please inquire]

Call us

200-1100nm silicon-based biased photodetector [PDF] [RFQ]

PDSBC2B10
Stock NO.: A80153421

Spectral Response 200-1100nm; photosensitive size Φ1.0mm, rise time 1ns, bandwidth 350 MHz

Response wavelength: 200–1100nm

Active area: 1mm

Bandwidth: 350MHz

Lead Time: 3-4 weeks

[Please inquire]

Call us

Parameter

Features

● The photosensitive range covers 200nm~1100nm, and is often used for ultraviolet and visible light measurement.

● Biased detector, extremely low noise, fast response, no gain

● Low cost, suitable for conventional photoelectric detection applications

● Excellent performance, high cost performance, all-round technical support

● Provide non-standard customized services

Specifications

Performance Specifications

Parameters	Value
Wavelength range	200-1100nm	350-1100nm		320-1100nm
Photosensitive size	Φ1.0mm	Φ3.6mm		Φ10.0mm
Bandwidth range	350MHz	25MHz		10MHz
Rise time (@50Ω)	1ns	14ns		35ns
NEP	5.0 × 10^-14W/Hz^1/2	1.6 × 10^-14W/Hz^1/2		2.4 × 10^-14W/Hz^1/2
Dark current	0.3nA(Typ.)/10 nA(Max)	0.35nA(Typ.)/6.0nA(Max)		0.9nA(Typ.)/10nA(Max)
Junction capacitance	6pF(Typ.)	40pF(Typ.)		150pF(Typ.)
Bias voltage	10V
Output current	0~10mA
Output voltage	~9V(Hi-Z)； ~170mV(50Ω)
Photosensitive surface depth	0.09" (2.2mm)	0.09" (2.2mm)		0.13" (3.3mm)
Operating temperature	10-40℃
Storage temperature	-20-70℃
Detector net weight	0.10kg
Undervoltage index	Vout ≤9V(Hi-Z) Vout ≤170mV(50Ω)
Appearance size	2.79" X1.96" X0.89" (70.9mm X 49.8mm X22.5mm)
Power supply battery	Power switch	Signal interface	Battery monitoring	Strut interface	Optical interface
A23 ，12VDC ，40mAh	Slide switch	BNC female connector	Momentary Push Buttons	M4 X 2	SM1 X 1 SM0.5 X 1

SI Response Curve

Attachment 1: Optional configuration table

Silicon based biasing photodetector	Optional Configuration
Product Name	Material	Type	Feature	Wavelength range Active Area	Reserve Optional configuration
PD: "Photodetector"	S:Si Silicon-based	B: Bias type	C: Conventional type	2B10: 200-1100nm, Φ1.0mm
				3E36: 350-1100nm, Φ3.6mm
				3D100: 320-1100nm, Φ10.0mm

Dimension

Application

● UV and Visible Light Measurements

350-1100nm silicon-based biased photodetector

Product model

Parameter

Related