InGaAs Avalanche Photodiode (APD) chips are semiconductor devices that are designed to detect weak optical signals in the infrared region. They are used in a variety of applications, such as fiber optic communications, LIDAR, and sensing. An APD is a type of photodiode that incorporates an internal gain mechanism, which allows it to achieve higher sensitivity than a standard photodiode. The gain is achieved through a process called avalanche multiplication, where a single photon creates an electron-hole pair, which then undergoes impact ionization, producing additional electron-hole pairs. This process results in an amplified output signal. InGaAs APDs are particularly useful for detecting wavelengths between 800 and 1700 nm.LD-PD INC is a company who design and manufacture InGaAs APD Chips.
Name | Model | Description | Parameter | Price |
---|
Electro-Optical Characteristics (@ Tc=22±3℃)
Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
Response Spectrum | λ | — | 950 ~ 1700 | nm | ||
Responsivity | Re | λ=1550nm Pin=1μW, M=1 | 0.90 | 1.00 | — | A/W |
Multiplication factor | M | λ=1550nm Pin=1μW, VR=VBR-3 | 10.00 | — | — | |
λ=1550nm Pin=1μW, VR=VBR-1 | 30.00 | — | — | — | ||
Dark Current | Id | VR=VBR-3, Pin=0μW | — | 8.00 | 50.00 | nA |
-3dB Cut-off frequency | BW | M=10 RL=50Ω | 0.60 | 1.25 | — | GHz |
Reverse Breakdown Voltage | VBR | IR =10μA, Pin=0μW | 35.00 | 50.00 | V | |
Capacitance | C | VR=VBR-3, f=1MHz | — | 1.80 | 2.00 | pF |
Temperature Coefficient of VBR | γ | IR=10μA, Pin=0μW -55℃~+85℃ | 0.07 | 0.11 | 0.15 | V/℃ |
Absolute Maximum Rating
Parameter | Symbol | Min. | Max. | Unit |
APD Voltage supply | VPD | — | VBR | V |
Operating Temperature | TC | -40 | +85 | ⁰C |
Storage Temperature | TSTG | -55 | +125 | ⁰C |
Forward Current | IF | — | 5 | mA |
Reverse Current | IR | — | 3 | mA |
Typical Performance Curves (@ Tc=22±3℃)
Parameter | Min. | Typ. | Max. | Unit | Notes |
Die Width | 375 | 385 | 395 | µm | |
Die Length | 375 | 385 | 395 | µm | |
Thickness | 115 | 125 | 135 | µm | |
Detection Window | — | 200 | — | µm | |
Bonding Pad Diameter | — | 80 | — | µm | Au metal |
● Distance measurement
● Spatial light transmission
● OTDR
● Low-light-level detection