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  • 850nm 100Gb/s InGaAs 1×4 Array Photodetector Chip

    • 850nm 100Gb/s InGaAs 1×4 Array Photodetector Chip     


    This product is an 850 nm 100 Gb/s InGaAs 1×4 array photodetector chip that performs photoelectric conversion. It is suitable for applications such as multimode transceivers and optical receivers.



    Product model


    Name Model Price

    Parameter


    Features

    ● Large photosensitive area

    ● Low capacitance

    ● Low dark current

    ● High responsivity

    Specifications

    Unless otherwise specified, measurements are taken at 25°C

    Parameter

    Symbol

    Test Condition

    Min.

    Typ.

    Max.

    Unit

    Operating Temperature

    To


    0


    75

    °C

    Storage Temperature

    Ts


    -40


    85

    °C

    Operating Wavelength

    λ



    850


    nm

    Bias Voltage

    Vb


    3


    6

    V

    Active Area Diameter

    Φ



    32


    μm

    Responsivity

    R

    λ = 1550 nm, Vb = 3 V


    0.6


    A/W

    Dark Current

    Id

    Vb = 3 V


    0.1

    1

    nA

    Capacitance

    C

    Vb= 3 V


    100


    fF

    Series Resistance

    Rs



    10


    Ω

    3 dB Bandwidth (15 Ω TIA)

    BW

    Ps, o= 0 dBm, Vb = 3 V


    32


    GHz


    Dimensions and Pin definitions

    850nm 100Gb.png

    Appearance

    Min. Value

    Typical Value

    Max. Value

    Unit

    Length

    1050

    1100

    1150

    μm

    Width

    240

    290

    340

    μm

    Thickness

    185

    200

    215

    μm


    Precautions for Use

    ● Necessary ESD protection measures should be taken to prevent the chip from electrostatic damage.

    ● Extreme care is required when handling the chip, and vacuum suction is recommended for chip handling.

    ● Parameters such as wire bonding force and temperature must be set carefully to avoid damaging the chip.




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