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    • 850nm 100Gb/s InGaAs 1×4 Array Photodetector Chip


    Operating Wavelength 850nm, Active Area Diameter 32μm, Reponsivity ≥0.6 A/W@1.55μm, 3 dB Bandwidth (15 Ω TIA) 32GHz, MOQ:20 PCs

    Part Number  :  APC-850-1x4-100
    Unit Price  :  USD [Please inquire]
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    This product is an 850 nm 100 Gb/s InGaAs 1×4 array photodetector chip that performs photoelectric conversion. It is suitable for applications such as multimode transceivers and optical receivers.

    Unless otherwise specified, measurements are taken at 25°C

    Parameter

    Symbol

    Test Condition

    Min.

    Typ.

    Max.

    Unit

    Operating Temperature

    To


    0


    75

    °C

    Storage Temperature

    Ts


    -40


    85

    °C

    Operating Wavelength

    λ



    850


    nm

    Bias Voltage

    Vb


    3


    6

    V

    Active Area Diameter

    Φ



    32


    μm

    Responsivity

    R

    λ = 1550 nm, Vb = 3 V


    0.6


    A/W

    Dark Current

    Id

    Vb = 3 V


    0.1

    1

    nA

    Capacitance

    C

    Vb= 3 V


    100


    fF

    Series Resistance

    Rs



    10


    Ω

    3 dB Bandwidth (15 Ω TIA)

    BW

    Ps, o= 0 dBm, Vb = 3 V


    32


    GHz



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    850nm 100Gb-s InGaAs 1×4 Array Photodetector Chip .pdf


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