Φ16μm Geiger-mode APD small array chip (4×4 or 8×8 Array)

InGaAs and InGaAsP single-photon avalanche diode (SPAD) chips with 4×4 and 8×8 array specifications are dedicated chips for short-wave infrared single-photon detection, counting and imaging. In the Geiger working mode, each pixel of the chip operates independently and freely, and is mainly used to detect weak light signals in the near-infrared band range of 0.9~1.7μm and 0.95~1.25μm.

Name	Model	Description	Parameter	Price
1550nm 4x4 Geiger-mode APD small array chip [PDF] [RFQ]	A4P50F-1550 (Stock NO. Not entered)	Response wavelngth 0.9~1.7μm, Responsivity 7.5A/W@1550nm, Array size 4×4, pixel size 50μm×50μm, Active area size Φ16μm	Response wavelength: 900-1700nm Material: InGaAs Lead Time: 6-8 weeks	[Please inquire] Call us

Name

Model

Description

Parameter

Price

1550nm 4x4 Geiger-mode APD small array chip [PDF] [RFQ]

A4P50F-1550
(Stock NO. Not entered)

Response wavelngth 0.9~1.7μm, Responsivity 7.5A/W@1550nm, Array size 4×4, pixel size 50μm×50μm, Active area size Φ16μm

Response wavelength: 900-1700nm

Material: InGaAs

Lead Time: 6-8 weeks

[Please inquire]

Call us

Parameter

Features

● Spectral response band 0.9~1.7μm and 0.95~1.25μm are optional

● Pixels run independently and freely

● Pixel can detect weak photon signals

● High detection efficiency

E/O Characteristics

Parameter/Symbol		Test Condition	Min.	Max.	Unit
Unit DC Characteristics Tc=23±2℃	Breakdown Voltage，V_br	I_d=10μA	50	80	V
	Responsivity，R_e	λ=1.55μm/1.06μm, V_r=V_br－2V, Φ_e=1μW	7.5		A/W
	Dark Current，I_d	Vr=V_br－2V, Φ_e=0μW		1	nA
	Capacitance，C_tot	Vr=V_br－2V, f=1MHz		0.25	pF
	Temperature Coefficient of Breakdown Voltage，η	T_op = ﹣40~﹢30℃, I=10μA, Φ_e=0		0.15	V/℃
	Breakdown Voltage Consistency，ΔV_br	I_d=10μA		0.05	V

Parameter/Symbol		Test Condition	Chip Module
Parameter/Symbol		Test Condition	A4P50F-1550	A4P50F-1064	A4(8)P100F-1550	A4(8)P100F-1064
Unit Geiger characteristic T_op=－20℃	Photon detection efficiency，PDE	0.1ph/pulse, λ=Response peak wavelength	≥ 20%
	Normalized dark count rate*，DCR	f_g=100MHz, PDE=20%	≤ 10kHz	≤ 5kHz	≤ 10kHz	≤ 5kHz
	Afterpulse probability，APP	f_g=100MHz, PDE=20%	≤ 2.5%	≤ 2%	≤ 2.5%	≤ 2%
	Crosstalk probability，Pxt	f_g=100MHz, PDE=20%	≤ 20%		≤ 10%

*Supports customization for special applications：DCR＜1kHz @0℃ or APP＜0.5% @0℃

Absolute Maximum Ratings

Items	Parameter/Symbol	rated value
Absolute maximum rating	storage temperature，T_stg	﹣50℃~﹢85℃
	(operating) ambient temperature，T_c	﹣50℃~﹢80℃
	Solder temperature，T_sld（Time）	260℃（10s）
	DC reverse bias voltage，V_r	Vbr
	Overbias Pulse Amplitude，V_g	10V
	Input optical power，Φ_e（Continuous ）	1mW
	Forward current，I_f（Continuous ）	1mA
	Electrostatic Discharge Sensitivity，ESD	≥300V

Chip Structure

Chip Module	A4P50F-1550/-1064	A4P100F-1550/-1064	A8P100F-1550/-1064
Array size	4×4		8×8
pixel size	50μm×50μm	100μm×100μm	100μm×100μm
Active area size	Φ16μm

Outline Diagram and Die Dimensions

Unit: μm

Schematic diagram of the structure of the 50μm pixel pitch 4×4 array chip A4P50F

Schematic diagram of the 100μm pixel pitch 4×4 array chip A4P100F

Schematic diagram of the structure of the 8×8 array chip A8P100F with a pixel pitch of 100 μm

Quality reliability: The product meets the requirements of Telcordia-GR-468-CORE for product reliability.

Application

● Range measurement through fog, haze, smoke and dust

● Near infrared laser warning

● Long-distance light ranging

● Long distance space laser communication

Φ16μm Geiger-mode APD small array chip (4×4 or 8×8 Array)

Product model

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