Centre Wavelength

λ

794.5

795.0

795.5

nm

Side Mode Suppression Ratio

SMSR

30

40

dB

Threshold Current

Ith

20

30

mA

Operating Current

Iop

150

250

mA

Operation Temperature

Top

15

25

45

℃

Chip output Power

Pf

30

40

50

mW

Quantum Efficiency

η

0.08

0.12

mW/mA

Current Tuning Coefficient

∆λ/∆I

0.015

nm/mA

Temperature Tuning Coefficient

∆λ/∆T

0.12

nm/K

Forward Voltage

Vf

1.3

2

V

Thermistor Resistance

RT

9.5

10

10.5

KΩ

Thermistor Temp. Coefficient

-4.4

%/°C

Connector

FC/APC

Fiber Bend Radius

3cm

Max Attenuation

2.1dB/km

Cladding Diameter

125um

Coating Diameter

250um

Core Cladding Concentricity

≤0.5um

Mode Field diameter

6.6um

Thermistor Type

NTC

Resitance@25deg

10000

ohm

Resistance Tol.±

1

%

Beta 0-50 deg

3375

K

2

Thermistor

9

N/C

3

PD Monitor Anode (-)

10

Laser Anode (+)

4

PD Monitor Cathode (+)

11

Laser Cathode (–)

5

Thermistor 

12

N/C

6

N/C

13

Case Ground

7

N/C

14

Thermoelectric Cooler (–)

Case Temperature

-5

25

70

Chip Temperature

℃

+10

25

30

Operating Current

mA

0

120

250

Diode Forward Current in Pulse operation

mA

450

600

Forward Voltage

V

0.8

1.2

2.0

TEC Current

A

-

-

3

TEC Voltage

V

4

Reverse   Voltage（LD）

V

-

-

2.0

Reverse Voltage(PD)

V

-

-

20