LD-PD PTE.LTD's InGaAs biased photodetector has a sensitivity range of 500nm~2600nm, extremely low noise, fast response, no gain, low cost, suitable for conventional photodetection applications, excellent performance, high cost performance, and provides omnidirectional technical support, which is often used in visible light and infrared light measurement.
Parameters | Value |
Wavelength range | 800-1700nm | 900-2600nm |
Photosensitive size | Φ0.5mm | Φ150um | Φ0.5mm | Φ2.0mm | Φ1.0mm |
Bandwidth range | DC～150MHz | DC～380MHz | DC～20MHz | DC～5MHz | DC～25MHz |
Gain | Hi-Z Load:10kV/A； 50Ω Load:5kV/A | Hi-Z Load: 5×104V/A； 50Ω Load:2.5×104V/A | 1×1011V/A±10% | Hi-Z Load:500kV/A； 50Ω Load: 175kV/A | Hi-Z Load: 1×104V/A； 50Ω Load:5×103V/A |
Signal Amplitude | Hi-Z Load: 0～10V； 50Ω Load: 0～5V | Hi-Z Load: 0～10V； 50Ω Load: 0～5V | 0~10V | Hi-Z Load:0～10V； 50Ω Load:0~3.5V | Hi-Z Load: 0～10V； 50Ω Load: 0～5V |
NEP | 1.2×10-11W/Hz1/2 | 1.0 × 10-13W/Hz1/2 | 2×10-14W/Hz1/2 | 2.2×10-11W/Hz1/2 | 1.1×10-11W/Hz1/2 |
Sensitive Surface depth | 0.13" (3.3 mm) | 0.16" (4.1 mm) | 0.07" (1.8 mm) | 0.15" (3.7 mm) | 0.09" (2.2mm) |
Operating temperature | 10-40℃ | 10-50℃ |
Storage temperature | -20-70℃ | -25-70℃ |
Detector Net Weight | 0.10kg | 0.06kg | 0.10kg |
Appearance Dimensions | 2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm) | 2.79" X 1.96" X 0.89" (70.9 mm X 49.8 mm X 22.5 mm) | 2.79" X 1.96" X 0.89" (70.9 mm X 49.9 mm X 22.5 mm) | 2.79" X 1.96" X 0.8" (70.9 mm X 49.9 mm X 22.5 mm) | 2.79" X 1.96" X 0.89" (70.9 mm X 49.8 mm X 22.5 mm) |
Power Interface | Power supply | Power Switch | Signal Interface | Mounting Interface | Optical Interface |
LUMBERG R SMV3 FEMA LE | LDS12B(DP), ±12 VDC regulated linear power supply, 6W, 220VAC | Sliding Switch With LED Indicator | BNC Female socket | M4×2 | SM1× 1 SM0.5 × 1 |
Responsivity Curve
Product Configurations：
Attachment 1: Optional Configuration Table
Silicon-based amplified photodetector | Optional Configurations |
Product Name | Material | Type | Features | Wavelength Range Sensitive Area | Reserved Optional Configurations |
PD: "Photodetector" | J: InGaAs | A: Amplified Type | F: Fixed gain | 8J5：800-1700nm，Φ0.5mm | -s: 800-1700nm, Φ0.5mm for extremely weak light measurement |
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| 8J015：800-1700nm，Φ150um |
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| 8J20： 800-1700nm，Φ2.0mm |
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| 9O10：900-2600nm，Φ1.0mm |
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Attachment 2: Model and Part Number Cross-reference Table
Model | Part Number | Specs |
PDJAF8J5 | A80153440 | 800-1700nm InGaAs Amplified Photodetector, Photosensitive Area Φ0.5mm, Fixed gain 10kV/A, Bandwidth Range DC ～150MHz, Fast low-light measurement |
PDJAF8J5-S | A80153441 | 800-1700nm InGaAs Amplified Photodetector, Photosensitive Area Φ0.5mm, Fixed gain 1x1011V/A±10%, Bandwidth Range DC ～20MHz, Extremely weak light measurement |
PDJAF8J015 | A80153442 | 800-1700nm InGaAs Amplified Photodetector, Photosensitive Area Φ150mm, Fixed gain 5x104V/A, Bandwidth Range DC～380MHz, Fast low-light measurement |
PDJAF8J20 | A80153443 | 800-1700nm InGaAs Amplified Photodetector, Photosensitive Area Φ2.0mm, Fixed gain 500kV/A , Bandwidth Range DC ～5MHz, Large target surface |
PDJAF9O10 | A80153444 | 900-2600nm InGaAs Amplified Photodetector, Photosensitive Area Φ1.0mm, Fixed gain 1x104V/A, Bandwidth Range DC ～25kHz, Infrared extension |
800-1700nm InGaAs Amplified Photodetector.pdf
