1550nm Gain Chip


Central wavelength 1550nm, Output power >2mW, ASE bandwidth 50nm, SMSR 40dB(Min qty: 5pcs)

Part Number  :  GC-1550-1
Unit Price  :  USD [Please inquire]
Lead time  :   [Please inquire]
Inventory quantity   :   [Please inquire]
Stock NO.   :  I80040007
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Gain chips are semiconductor optical elements used as the optical gain medium of external cavity laser diodes. Gain chips are used as a TLS (Tunable Light Source) that can change the oscillation wavelength using a wavelength selection filter such as a diffraction grating.

Basic parameter: 

Parameter

Symbol

Test condition

Min.

Typ.

Max.

Unit

Center wavelength

λc

If=100mA Tc=25°C

1520

-

1560

nm

Operation Current

Iop

Tc=25°C

-

250

-

mA

Forward Voltage

Vf

IF=100mA, Tc=25°C

-

1

1.5

V

Spectrum Modulation

M

IF=100mA, Tc=25°C

-

3

-

dB

ASE Spectrum bandwidth

BW

IF=100mA, Tc=25°C

-

50

-

nm

Beam Angle

Ang

IF=100mA, Tc=25°C

-

19.5

-

°

ASE Power

Po

IF=100mA, Tc=25°C

-

2

-

mW

AR reflectance

R1


-

-

0.005

%

HR reflectance

R2


-

95

-

%

Horizontal divergence Angle

θ

IF=100mA, Tc=25°C

-

18

-

°

Vertical divergence Angle

θ

IF=100mA, Tc=25°C

-

29

-

°


 PIV-25°C

t3_1.png


ASE spectrum (100mA, Res: 0.5nm)

Spectrum~0.1dB,3dB BW~50nm,Center wavelength:1555nm

t5.jpg


t6.jpg


t7.jpg


Divergence Angle

t8.jpg

Horizontal divergence Angle: 17.74°, Vertical divergence Angle: 28.89°


t9.jpg


Horizontal divergence Angle: 17.64°, Vertical divergence Angle: 30.08°



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