500um Extended InGaAs/InP PIN PD Chip


Response Range 900-2600nm, Active area diameter 500um, Bare Chip

Part Number  :  LD-PD500L-2600
Unit Price  :  USD [Please inquire]
Lead time  :   [Please inquire]
Inventory quantity   :   [Please inquire]
Email UsRequest for Quotation

Extended InGaAs Photodiodes Chips, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 900 nm to 2600 nm. 

PARAMETER

SYMBOL

ACTIVE AREA (um)

MIN

TYP

MAX

UNIT

TEST CONDITIONS

Response   range

λ

All

1000


2600

nm


Responsivity

R

All


1.0


A/W

λ=2300nm

Capacitance

C

Φ300


120


pF

VR=-1V,   f= 1MHz

Φ500


160


Φ1000


300


Dark current

ID

Φ300


1.0

2.0

uA

VR=-0.5V

Φ500


3.0

6.0

Φ1000


5.0

10.0

Breakdown

Vbr

All

2




I= 10uA


Spectral Response

8b1d5991.png


Absolute Maximum Ratings

PARAMETER

SYMBOL

VALUE

UNIT

Reverse voltage

VRmax

1

V

Forward Current


10

mA

Operating temperature

Topr

-40 to +85

Storage temperature

Tstg

-40 to +100


Dimension Parameter

PARAMETER

SYMBOL

Φ300

Φ500

Φ1000

UNIT

Active area diameter

-

300

500

1000

µm

Bond pad diameter

-

80

80

120

µm

Die size

-

420x420

600x600

1250x1250

µm

Die thickness

t

180±20

180±20

180±20

µm


Precautions for use

This chip is susceptible to damage as a result of ESD. Use of ground straps, antistatic mats, and other standard ESD protective equipment is requisite when handling or testing an InGaAs or GaAs PIN/APD chip.


Related

Name Model Price
300um Extended InGaAs/InP PIN PD Chip [PDF]

LD-PD300L-2600

[Please inquire]
1000um Extended InGaAs/InP PIN PD Chip [PDF]

LD-PD1000L-2600

[Please inquire]

Download


Request for Quotation

By using this website and services, you agree to our use of cookies. Cookies enable us to better provide member services and record your browsing records in a short time. OK Learn more
close[X]
Your shopping cart
Model Quantity Price Subtotal
Total price:USD:
View shopping cart Settlement
︿ TOP
提示