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    • 850-910nm 56G baud PIN PD Chip


    Response wavelngth 840-910nm, Active area diameter 32µm, Bandwidth 34GHz, Material InGaAs, Responsivity 0.55A/W@850nm or 0.65A/W@910nm

    Part Number  :  LP-PD5032
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    LP-PD5032 56Gbaud High-Speed PIN Photodiode ChipThe LP-PD5032 is a high-performance 850-910nm PIN photodiode chip designed to meet the rigorous demands of next-generation optical communications. Featuring a specialized GSG (Ground-Signal-Ground) electrode structure and a 32um active area, this chip is optimized for high-speed data transmission with minimal signal interference.


    Parameter

    Symbol

    Min

    Typ

    Max

    Unit

    Test CondDitions

    Response range

    λ

    840

    850

    910

    nm


    Responsivity

    R


    0.55


    A/W

    λ=850nm


    0.65


    A/W

    λ=910nm

    Dark current

    ID


    0.3

    1.0

    nA

    Vr=-5V

    Capacitance

    C


    0.12

    0.15

    pF

    VR=-2V, f=1MHz

    Bandwidth

    Bw


    34.0


    GHz

    VR=-2V 3dB down, RL=50Ω

    Note: (Tc=25℃, Single Die)


    Absolute Maximum Ratings

    Parameter

    Symbol

    Value

    Unit

    Reverse voltage

    VRmax

    20

    V

    Operating temperature

    Topr

    -40 to +85

    ℃

    Storage temperature

    Tstg

    -55 to +125

    ℃

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