1mm InGaAs PIN Photodiode TO5

Response wavelength 800~3600nm, Material InAs, Active area 1mm, TO5 Package

Part Number : PL-IG-AR1-W3600-TO

Unit Price : USD [Please inquire]

Lead time : in stock

Inventory quantity : [Please inquire]

Stock NO. : E80043068

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Overview
Electrical/Optical Characteristics
PDF
RFQ

InAs photovoltaic detectors have high sensitivity in the infrared region around 3um as with PbS photoconductive detectors, and also feature low noise, high speed and high reliability. Various types are available, It can work in non-cooled condition that delivers high performance.

Electrical/Optical Characteristics(Tsub=25°C, CW bias unless stated otherwise)

Parameter	Symbol	Unit	Typical Value
Active diameter	Φ	mm	1.0
Spectral range	λ	nm	800-3600
Responsivity	Re (VR=-0.2V, λ=800nm)	mA/mW	0.08
	Re (VR=-0.2V, λ=3000nm)	mA/mW	1.0
	Re (VR=-0.2V, λ=3600nm)	mA/mW	0.2
Response time	Tr (RL=50Ω,VR=-0.2V)	ns	700
Shunt resistance	RSH	ohm	70
Dark current	Id (VR=-0.2V)	uA	250
Reverse Breakdown voltage	VBR (IR=10μA)	V	1
Junction capacitance	Cj (f=1MHz, VR=-0.2V)	pF	20
Saturated Optical Power	Ps(VR=-0.2V)	mW	2
NEP（λ=λp）		W/HZ^1/2	1.5X10^-11
Operating voltage	VR	V	0-0.2
Package	Hermetic package TO5