Our InGaAs detectors feature a spectral response range of 800–2600 nm, commonly used for near- to mid-infrared measurements.The amplified detector offers 8-stage adjustable gain for precise photoelectric conversion.With a wide dynamic range, it is suitable for various infrared optoelectronic development scenarios and enjoys broad applicability.It delivers outstanding performance, excellent cost-effectiveness, and comprehensive technical support.Custom non-standard solutions are also available upon request.
Common parameters
Part Number | InGaAs-0.8/2.2um-1x1mm-AG8 | InGaAs-0.8/2.2um-2x2mm-AG8 | InGaAs-0.8/2.6um-1x1mm-AG8 | InGaAs-0.8/2.6um-2x2mm-AG8 |
Spectral Response Range | 800~2200nm | 800~2600nm |
Response time constant | 35ns | 200ns | 25ns | 233ns |
Gain | Hi-Z load: 1.51kV/A~4.75 MV/A; 50Ω load: 0.75kV/A~2.38 MV/A |
Signal amplitude | Hi-Z load: 0~10V; 50Ω load: 0~5V |
Gain adjustment method | Rotary gear adjustment, 0~70dB, 10dB per gear, 8 gears in total. Bandwidth is inversely proportional to gain. |
NEP | 1.0X10-1(W/Hz1/2) | 2.5X10-14(W/Hz1/2) | 1.0X10-12(W/Hz1/2) | 2.0X10-12(W/Hz1/2) |
Active Area | 1mm x 1mm | 2mm x 2mm | 1mm x 1mm | 2mm x 2mm |
Active Area depth | 0.13" (3.3 mm) |
Detector net weight | 0.10kg |
Operating temperature | 10～40℃ |
Storage temperature | -20～70℃ |
Dimensions | 2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm) |
Power supply interface | Power switch | Signal interface | Gain adjustment | Rod interface | Optical interface |
LUMBERG RSMV3 FEMALE | Slide switch with LED lights | BNC female connector | 8-position knob | M4 x 2 | SM1 x 1 SM0.5 x 1 |
Eight-level quantitatively adjustable gain parameters
0dB | 10dB | 20dB | 30dB |
Gain (Hi-Z) | 1.51X103V/A | Gain (Hi-Z) | 4.75X103V/A | Gain (Hi-Z) | 1.5X104V/A | Gain (Hi-Z) | 4.75X104V/A |
Gain (50Ω) | 0.75X103V/A | Gain (50Ω) | 2.38X103V/A | Gain (50Ω) | 0.75X104V/A | Gain (50Ω) | 2.38X104V/A |
Bandwidth (BW) | 13MHz | Bandwidth (BW) | 1.7MHz | Bandwidth (BW) | 1.1MHz | Bandwidth (BW) | 300kHz |
Noise (RMS) | ≤250μV | Noise (RMS) | ≤250μV | Noise (RMS) | ≤250μV | Noise (RMS) | ≤250μV |
40dB | 50dB | 60dB | 70dB |
Gain (Hi-Z) | 1.51X105V/A | Gain (Hi-Z) | 4.75X105V/A | Gain (Hi-Z) | 1.5X106V/A | Gain (Hi-Z) | 4.75X106V/A |
Gain (50Ω) | 0.75X105V/A | Gain (50Ω) | 2.38X105V/A | Gain (50Ω) | 0.75X106V/A | Gain (50Ω) | 2.38X106V/A |
Bandwidth (BW) | 90kHz | Bandwidth (BW) | 28kHz | Bandwidth (BW) | 9kHz | Bandwidth (BW) | 3kHz |
Noise (RMS) | ≤250μV | Noise (RMS) | ≤250μV | Noise (RMS) | ≤300μV | Noise (RMS) | ≤400μV |
Signal bias | ±8mV(Typ.) ，±12mV(Max) |
Response curve
