InGaAs SPAD 3pin TO46 detector

Response wavelngth 900~1700nm, Responsivity 8A/W@1.55μm, Dark Current 1nA, Material InGaAs, TO46 Package

Part Number : IGA-APD-1550-TO46

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Overview
Electrical/Optical Characteristics
PDF
RFQ

High - temperature InGaAs/InP Geiger - mode avalanche photodiodes (GM - APD) are special devices for short - wave infrared single - photon detection and counting. This detector has been specially optimized for the single - photon detection performance in the temperature range of 0℃ and above. It can meet the technical requirements of high - efficiency and low - dark - count single - photon detection in fields such as quantum secure communication and weak light detection while significantly reducing the refrigeration requirements. It can realize the detection of single photons with wavelengths from 0.9 to 1.7μm, and meet the needs of equipment miniaturization and operation under different working conditions.

Parameter/Symbol		Test Condition	Minimum	Maximum	Unit
DC Characteristics T_c=23±2℃	Breakdown Voltage，V_br	I_d=10μA	50	80	V
	Responsivity，R_e	λ=1.55μm, V_r=V_br－2V, Φ_e=1μW	8		A/W
	Dark Current，I_d	V_r=V_br－2V, Φ_e=0μW		1	nA
	Capacitance，C_tot	V_r=V_br－2V, f=1MHz		0.25	pF
	Breakdown Voltage Temperature Coefficient，η	T_op = ﹣40~﹢30℃, I=10μA, Φ_e=0		0.15	V/℃
Geiger Characteristics T_op=0℃	Photon Detection Efficiency，PDE	0.1ph/pulse, λ=1.55μm	20		%
	Normalized Dark Count Rate*，DCR	f_g=100MHz, PDE=20%		10	kHz
	Afterpulse Probability，APP	f_g=100MHz, PDE=20%		2.5	%

Typical Curves：

Absolute Maximum Ratings：

Items	Parameter/Symbol	Rating
Absolute Maximum Ratings	Storage Temperature，Tstg	﹣50℃~﹢85℃
	(Operating) Ambient Temperature，Tc	﹣50℃~﹢80℃
	Soldering Temperature，Tsld（time）	260℃（10s）
	DC Reverse Bias Voltage，Vr	Vbr
	Overbias Pulse Amplitude，Vg	10V
	Input Optical Power，Φe（continuous）	1mW
	Forward Current，If（continuous）	1mA
	Electrostatic Discharge Susceptibility，ESD	≥300V

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InGaAs SPAD 3pin TO46 detector.pdf

InGaAs SPAD 3pin TO46 detector

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