Response wavelngth 900-1700nm, Lager active diameter, Low noise, High reliability, TO5 Package
| Part Number : PL-1700-IG-AR3-TO5 |
| Unit Price : USD [Please inquire] |
| Lead time : in stock |
| Inventory quantity : [Please inquire] |
| Stock NO. : E80042007 |
| Email UsRequest for Quotation |
Large area, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 900 nm to 1700 nm. The photosensitive area is 3 mm in diameter. Planar-passivated device structure.
Tsub=25°C, CW bias unless stated otherwise
Parameters | Sym. | Test conditions | Min | Typ | Max | Unit |
Response Spectrum | λ | — | 900~1700 | nm | ||
Active diameter | φ | — | 3000 | µm | ||
Reponsivity | Re | VR=5V,λ=1.31µm,Pin=10µw | 0.80 | A/W | ||
VR=5V,λ=1.55µm,Pin=10µw | 0.85 | |||||
Max linear power | Φs | VR =5V,λ=1.55µm | 10 | mW | ||
Response time | tS | VR=5V,RL=50Ω, f=1MHz | 40 | ns | ||
Total capacitance | C | VR=5V,f=1MHz | 300 | pF | ||
Dark current | ID | VR=5V | 10 | 100 | nA | |
Shunt impedance | Rsh | VR=10mV | 1 | MΩ | ||
Reverse breakdown voltage | VBR | IR=10µA | 20 | V | ||
Typical characteristical curve

P-I Curve

Application electric circuit

Dimensions and Pin definitions


1 | P + |
2 | N- |
3 | GND |
Absolute Maximem Ratings
Operating voltage | 10V | Operating temperature | -50~+100℃ | Power dissipation | 100mW |
Forward current | 10mA | storage temperature | -55~+125℃ | Soldering temperature | 260℃(10s) |