The SPD5526 is a photon-counting InGaAs avalanche photodiode device with a monolithically integrated negative feedback resistor.Based on the high gain characteristics of the Geiger mode, the product multiplies the detected photon Geiger into a macroscopic current; the negative feedback resistor performs dynamic voltage division to achieve self-quenching and self-recovery of the Geiger avalanche electric field in the avalanche photodiode.
The SPD5526 is packaged in a TO-coaxial housing with a fiber pigtail. The optical input interface is a single-mode or multi-mode fiber with an FC/UPC connector and a 0.9 mm tight-buffer protective tube.
Name | Model | Description | Parameter | Price |
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Main optoelectronic indicators
Linear mode parameters
Characteristic parameters | Test conditions (unless otherwise specified, TC = 25 ± 5 ° C) | Min. | Max. | Unit |
Spectral response range | - | 950 | 1650 | nm |
Reverse breakdown voltage VBR | ID=100nA | 60 | 85 | V |
Responsivity Re | λ=1.55μm,VR=VBR-1V,φe=1μw | 8 | - | A/W |
Dark current ID | VR=VBR-1V,φe=0 | - | 1 | nA |
Capacitance Ctot | VR =VBR-1V,f=1MHz | - | 0.6 | pF |
Integrated resistance value Rs | IF=200μA,φe=0 | 200±50 | KΩ | |
Breakdown voltage temperature coefficient ŋ | TC=-45~+30℃,IR =10μA,φe=0 | 0.10 | 0.15 | V/℃ |
Geiger mode parameters
Characteristic parameters | Test conditions (TC=-40±3℃,fp=50KHz) | Min. | Max. | Unit |
Single photon detection efficiency PDE | λ=1550nm | 15 | - | % |
Dark count rate DCR | PDE=15% | - | 10 | kcps |
After pulse probability APP | PDE=15%,λ=1550nm,Δt=1us | - | 15 | % |
Pulse output amplitude Vout | PDE=15%,R=50Ω | 0.5 | - | mV |
Note:λ is the wavelength of incident light, fp is the frequency of optical pulse signal, and R is the sampling resistor.
Absolute Maximum Ratings and Recommended Operating Conditions
No. | Parameters | Rated value | |
Absolute Maximum Ratings | 1 | Storage temperature TSTG | -50℃~+85℃ |
2 | Working environment temperature Tc | -50℃~60℃ | |
3 | Soldering temperature Tstd (time) | 260℃(10s) | |
4 | Reverse DC bias voltage VDC | VBR +5V | |
5 | Input optical power φe (continuous) | 1mW | |
6 | Forward current IF (continuous) | 200μA | |
7 | Electrostatic discharge sensitivity ESD | ≥300V | |
8 | Pigtail pulling strength | 3.0N |
No. | Parameters | Rated value | |
Recommended working conditions | 1 | APD chip operating temperature Tth | -50℃~-30℃ |
2 | Reverse DC bias voltage VDC | VBR+1V~VBR+5V |
Typical characteristic curve
Figure 1 Photocurrent and dark current curves
Figure 2 Breakdown voltage temperature coefficient
Quality reliability assurance
Implement the relevant requirements of GJB8119-2013 "General Specifications for Semiconductor Optoelectronic Devices"
Package, dimensions, equivalent circuit and pin definition (unit: mm)
If there are no special requirements, the optical fiber interface of the SPD5526 device is G657A2 single-mode optical fiber (0.9mm tight-buffered protective tube), FC/UPC connector, and the optical fiber length is 1.0m, that is, the detailed ordering model is SPD5526-SM-FC/UPC (1.0m).
If the fiber specifications, length, connectors, etc. required for the ordered product are inconsistent with this product, please follow the format as shown below.
Notes
● The product is an electrostatic sensitive device, and ESD protection must be taken during storage and use.
● The bending radius of the product fiber is not less than 30mm. Avoid fiber breakage and contamination or damage to the connector during storage and use.
● The product requires external refrigeration. The clamping carrier used for refrigeration needs to be made of a material with good thermal conductivity, keep the cavity wall at one end of the device lead and the contact surface of the clamping carrier tightly matched, and apply thermal conductive material on the contact surface of the two.
● The product should be stored in a clean environment with ventilation and no corrosive gas at a temperature of -10~+40℃ and a relative humidity of no more than 80%.