The SPD6528Q is a Geiger-mode InGaAs avalanche photodiode (APD) module with single-photon sensitivity and integrated negative feedback resistance. It utilizes Geiger-mode high gain to amplify detected photons into macroscopic current, while the feedback resistor dynamically quenches and restores the avalanche field.
The module integrates an NFAD chip, capacitor, thermistor, ceramic carrier, and TEC in a butterfly hermetic package with metalized fiber coupling. Optical input: 62.5 μm multimode fiber (0.9 mm tight buffer) with FC/UPC connector.
Product model
Name
Model
Description
Price
Parameter
Key Parameter
Main Optoelectronic Indicators
1. Linear mode parameters
Parameters1. Linear mode parameters
Test conditions（unless otherwise specified，TC =25±5℃)
Min
Max
Unit
Spectral response range
—
950
1650
nm
Reverse breakdown voltage VBR
IR=10 μA ，Φe=0
60
85
V
Responsivity Re
Φe=1μW，VR=(VBR-1)V, λ=1550 nm±50 nm
8
A/W
Dark current ID
VDC=(VBR-1) V，Φe=0
1
nA
Capacitance Ctot
VDC=(VBR-1) V，f=1MHz
—
0.6
pF
Integrated resistance (Re)
I=200μA,Φe=0
200±50
KΩ
Breakdown voltage temperature coefficient η
TC=-45～+30℃ , IR=10μA，φe=0
0.10
0.15
V/℃
2. Geiger Mode Parameters
Parameters
Test Conditions
TC =-40±3℃ , fp=50KHz
Min
Max
Unit
Single photon detection efficiency PDE
λ=1550nm
15
%
Dark count rate DCR
PDE=15%
10
kcps
After pulse probability APP
PDE=15% ，λ=1550nm ， Δt=1us
15
%
Pulse output amplitude Vout
PDE=15% ，R=50 Ω
0.5
mV
Note: λ is the wavelength of incident light, fp is the frequency of the optical pulse signal, and R is the sampling resistor.
Absolute Maximum Ratings and Recommended Operating Conditions
Item
Parameter
Rating
Absolute Maximum Ratings
1
Storage temperatureTSTG
-50℃~+85℃
2
Operating environment temperatureTC
-50℃~60℃
3
Soldering temperatureTsld（time）
260℃（10s）
4
Reverse DC bias voltage VDC
VBR+5 V
5
Input optical powerφe（continuous）
1 mW
6
Forward currentIF（continuous）
200 μA
7
Electrostatic discharge sensitivityESD
≥300 V
8
Pigtail pulling force
3.0 N
Item
Parameter
Rating
Recommended Operating Conditions
1
APD chip operating temperatureTth
-50℃~-30℃
2
Reverse DC bias voltageVDC
VBR+1V～VBR+5V
Typical characteristic curve
Figure 1 Photocurrent and dark current curves
Figure 2 Breakdown voltage temperature coefficient
Dimensions and Pin definitions
Package Outline
Dimensions
Symbol
Min
Max
Symbol
Min
Max
Symbol
Min
Max
H1
7.40
7.45
7.50
L2
10.00
13.50
30.00
L8
8.70
8.90
9.10
H2
1.80
2.00
2.20
L3
4.05
4.25
4.45
L9
12.50
12.70
12.90
H3
7.57
7.77
7.97
L4
3.74
3.94
4.14
L10
38.20
38.40
38.60
H4
10.50
10.70
10.90
L5
21.80
22.00
22.20
ф 1
3.00
3.50
6.60
L0
1000.0
-
-
L6
25.80
26.00
26.20
ф2
0.40
0.50
0.60
L1
17.30
17.50
17.70
L7
-
2.54
-
ф3
2.20
2.40
2.60
Equivalent Circuit and Pin Definitions
Pin#
Function
Pin#
Function
1
Diode N (APD_N)
5
TEC-
2
Case Ground (GND)
6
Thermistor (R_th )
3
Diode P (APD_P)
7
Thermistor (R_th )
4
Signal Ground (DGND)
8
TEC+
TEC\NTC Electrical parameters
NTC (Thermistor): RT=10 kΩ @ 25℃, β=3450,5%.
TEC (Thermoelectric Cooler): IMAX=0.8 A, VMAX=11.9 V, THMAX=200℃
Ordering Info
SPD6528Q-XX-XX/XXX(XXX)
XX:Fiber Type
SM
MM(62.5)
MM(50)
XX/XXX:Fiber Connector
XX: FC
SC
LC
NC
XXX:UPC
APC
(XXX):Fiber Length
1.0m
1.5m
Note:
● The product is an electrostatic sensitive device, and ESD protection must be taken during storage and use.
● The bending radius of the product fiber is not less than 30mm. Avoid fiber breakage and contamination or damage to the connector during storage and use.
● The product requires external refrigeration. The clamping carrier used for refrigeration needs to be made of a material with good thermal conductivity, keep the cavity wall at one end of the device lead and the contact surface of the clamping carrier tightly matched, and apply thermal conductive material on the contact surface of the two.
● The product should be stored in a clean environment with ventilation and no corrosive gas at a temperature of -10~+40℃ and a relative humidity of no more than 80%.
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