SPD5522 InGaAs Geiger-mode Avalanche Photodiode     


The SPD5522 is an InGaAs avalanche photodiode device. Based on the high gain characteristics of the Geiger mode, the product multiplies the detected photon Geiger into a macroscopic current; it is designed for single-photon detection applications.The SPD5522 adopts a TO coaxial pigtail packaging structure, and the incident light interface is a single/multimode optical fiber with an FC/UPC connector (0.9mm tight-buffered protective tube).



Product model


Name Model Price


Parameter



Key Parameter

Main optoelectronic indicators

Linear mode parameters

Characteristic parameters

Test conditions

(unless otherwise specified, TC = 25 ± 5 ° C)

Min.

Max.

Unit

Effective detection surface diameter d

-

25

-

μm

Spectral response range

-

950

1650

nm

Reverse breakdown voltage VBR

IR=10 μA,Φe=0

60

85

V

Responsivity Re

Φe=1μW,VR=(VBR-1)V,λ=1550 nm±50 nm

8

-

A/W

Dark current ID

VDC =(VBR-1) V,Φe=0

-

1

nA

Capacitance Ctot

VDC =(VBR-1) V,f=1MHz

-

0.6

pF

Breakdown voltage temperature coefficient ŋ

T=-45~+30℃,IR =10μA,φe=0

0.10

0.15

V/℃

Geiger mode parameters

Characteristic parameters

Test conditions

Min.

Max.

Unit

Single photon detection efficiency PDE

TA = -40±5℃,fg = 10 MHz,fP = 100 kHz,

DCR = 10 kHz,λ = 1.55μm

15

-

%

Dark count rate DCR

TA = -40±5℃,fg = 10 MHz,fP = 100 kHz,

SPDE = 15%,λ = 1.55μm

-

10

kHz

After pulse probability APP (2 uS)

TA = -40±5℃,fg = 10 MHz,fP = 100 kHz,

SPDE = 15%,Δt=1us,λ = 1.55μm

-

2

%

Time jitter TJ

SPDE=15%

-

800

ps

Note: λ Is the wavelength of incident light, TA is the test temperature, μ is the average number of photons per pulse, fg is the gate signal frequency, and fp is the optical pulse signal frequency.


Absolute Maximum Ratings and Recommended Operating Conditions

No.

Parameters

Rated value

Absolute

Maximum

Ratings

1

Storage temperature TSTG

-50℃~+85℃


2

Working environment temperature Tc

-50℃~60℃


3

Soldering temperature Tstd (time)

260℃(10s)


4

Reverse DC bias voltage VDC

VBR+5V


5

Input optical power φe (continuous)

1mW


6

Forward current IF (continuous)

200μA


7

Electrostatic discharge sensitivity ESD

≥300V


8

Pigtail pulling strength

3.0N

No.

Parameters

Rated value

Recommended working

conditions

1

APD chip operating temperature Tth

-50℃~-30℃

2

Reverse DC bias voltage VDC

VBR+1V~VBR+5V


Typical characteristic curve

1G1.png

Figure 1 Photocurrent and dark current curves 


1G2.png

 Figure 2 Breakdown voltage temperature coefficient

Quality reliability assurance

Implement the relevant requirements of GJB8119-2013 "General Specifications for Semiconductor Optoelectronic Devices"

Dimensions and Pin definitions

Package, dimensions, equivalent circuit and pin definition (unit: mm)

1G3.png

1G6.png


Ordering Info

If there are no special requirements, the fiber interface of the SPD5522 device is G657A2 single-mode fiber (0.9mm tight-fitting protective tube), FC/UPC connector, and fiber length 1.0m, that is, the detailed order PN# is SPD5522.

1G5 - 1.png

Notes

● The product is an electrostatic sensitive device, and ESD protection must be taken during storage and use.

● The bending radius of the product fiber is not less than 30mm. Avoid fiber breakage and contamination or damage to the connector during storage and use.

● The product requires external refrigeration. The clamping carrier used for refrigeration needs to be made of a material with good thermal conductivity, keep the cavity wall at one end of the device lead and the contact surface of the clamping carrier tightly matched, and apply thermal conductive material on the contact surface of the two.

● The product should be stored in a clean environment with ventilation and no corrosive gas at a temperature of -10~+40℃ and a relative humidity of no more than 80%.



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