The SPD5522 is an InGaAs avalanche photodiode device. Based on the high gain characteristics of the Geiger mode, the product multiplies the detected photon Geiger into a macroscopic current; it is designed for single-photon detection applications.The SPD5522 adopts a TO coaxial pigtail packaging structure, and the incident light interface is a single/multimode optical fiber with an FC/UPC connector (0.9mm tight-buffered protective tube).
Name | Model | Description | Price |
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Main optoelectronic indicators
Linear mode parameters
Characteristic parameters | Test conditions (unless otherwise specified, TC = 25 ± 5 ° C) | Min. | Max. | Unit |
Effective detection surface diameter d | - | 25 | - | μm |
Spectral response range | - | 950 | 1650 | nm |
Reverse breakdown voltage VBR | IR=10 μA,Φe=0 | 60 | 85 | V |
Responsivity Re | Φe=1μW,VR=(VBR-1)V,λ=1550 nm±50 nm | 8 | - | A/W |
Dark current ID | VDC =(VBR-1) V,Φe=0 | - | 1 | nA |
Capacitance Ctot | VDC =(VBR-1) V,f=1MHz | - | 0.6 | pF |
Breakdown voltage temperature coefficient ŋ | TC=-45~+30℃,IR =10μA,φe=0 | 0.10 | 0.15 | V/℃ |
Geiger mode parameters
Characteristic parameters | Test conditions | Min. | Max. | Unit |
Single photon detection efficiency PDE | TA = -40±5℃,fg = 10 MHz,fP = 100 kHz, DCR = 10 kHz,λ = 1.55μm | 15 | - | % |
Dark count rate DCR | TA = -40±5℃,fg = 10 MHz,fP = 100 kHz, SPDE = 15%,λ = 1.55μm | - | 10 | kHz |
After pulse probability APP (2 uS) | TA = -40±5℃,fg = 10 MHz,fP = 100 kHz, SPDE = 15%,Δt=1us,λ = 1.55μm | - | 2 | % |
Time jitter TJ | SPDE=15% | - | 800 | ps |
Note: λ Is the wavelength of incident light, TA is the test temperature, μ is the average number of photons per pulse, fg is the gate signal frequency, and fp is the optical pulse signal frequency.
Absolute Maximum Ratings and Recommended Operating Conditions
No. | Parameters | Rated value | |
Absolute Maximum Ratings | 1 | Storage temperature TSTG | -50℃~+85℃ |
2 | Working environment temperature Tc | -50℃~60℃ | |
3 | Soldering temperature Tstd (time) | 260℃(10s) | |
4 | Reverse DC bias voltage VDC | VBR+5V | |
5 | Input optical power φe (continuous) | 1mW | |
6 | Forward current IF (continuous) | 200μA | |
7 | Electrostatic discharge sensitivity ESD | ≥300V | |
8 | Pigtail pulling strength | 3.0N |
No. | Parameters | Rated value | |
Recommended working conditions | 1 | APD chip operating temperature Tth | -50℃~-30℃ |
2 | Reverse DC bias voltage VDC | VBR+1V~VBR+5V |
Typical characteristic curve
Figure 1 Photocurrent and dark current curves
Figure 2 Breakdown voltage temperature coefficient
Quality reliability assurance
Implement the relevant requirements of GJB8119-2013 "General Specifications for Semiconductor Optoelectronic Devices"
Package, dimensions, equivalent circuit and pin definition (unit: mm)
If there are no special requirements, the fiber interface of the SPD5522 device is G657A2 single-mode fiber (0.9mm tight-fitting protective tube), FC/UPC connector, and fiber length 1.0m, that is, the detailed order PN# is SPD5522.
Notes
● The product is an electrostatic sensitive device, and ESD protection must be taken during storage and use.
● The bending radius of the product fiber is not less than 30mm. Avoid fiber breakage and contamination or damage to the connector during storage and use.
● The product requires external refrigeration. The clamping carrier used for refrigeration needs to be made of a material with good thermal conductivity, keep the cavity wall at one end of the device lead and the contact surface of the clamping carrier tightly matched, and apply thermal conductive material on the contact surface of the two.
● The product should be stored in a clean environment with ventilation and no corrosive gas at a temperature of -10~+40℃ and a relative humidity of no more than 80%.