The SPD5522 is an InGaAs avalanche photodiode device. Based on the high gain characteristics of the Geiger mode, the product multiplies the detected photon Geiger into a macroscopic current; it is designed for single-photon detection applications.The SPD5522 adopts a TO coaxial pigtail packaging structure, and the incident light interface is a single/multimode optical fiber with an FC/UPC connector (0.9mm tight-buffered protective tube).
Main optoelectronic indicators
Linear mode parameters
Characteristic parameters | Test conditions (unless otherwise specified, TC = 25 ± 5 ° C) | Min. | Max. | Unit |
Effective detection surface diameter d | - | 25 | - | μm |
Spectral response range | - | 950 | 1650 | nm |
Reverse breakdown voltage VBR | IR=10 μA，Φe=0 | 60 | 85 | V |
Responsivity Re | Φe=1μW，VR=(VBR-1)Ｖ，λ=1550 nm±50 nm | 8 | - | A/W |
Dark current ID | VDC =(VBR-1) V，Φe=0 | - | 1 | nA |
Capacitance Ctot | VDC =(VBR-1) V，f=1MHz | - | 0.6 | pF |
Breakdown voltage temperature coefficient ŋ | TＣ=-45～+30℃，IR =10μA，φe=0 | 0.10 | 0.15 | V/℃ |
Geiger mode parameters
Characteristic parameters | Test conditions | Min. | Max. | Unit |
Single photon detection efficiency PDE | TA = -40±5℃，fg = 10 MHz，fP = 100 kHz， DCR = 10 kHz，λ = 1.55μm | 15 | - | % |
Dark count rate DCR | TA = -40±5℃，fg = 10 MHz，fP = 100 kHz， SPDE = 15%，λ = 1.55μm | - | 10 | kHz |
After pulse probability APP (2 uS) | TA = -40±5℃，fg = 10 MHz，fP = 100 kHz， SPDE = 15%，Δt=1us，λ = 1.55μm | - | 2 | % |
Time jitter TJ | SPDE=15% | - | 800 | ps |
Note: λ Is the wavelength of incident light, TA is the test temperature, μ is the average number of photons per pulse, fg is the gate signal frequency, and fp is the optical pulse signal frequency.
Absolute Maximum Ratings and Recommended Operating Conditions
No. | Parameters | Rated value |
Absolute Maximum Ratings | 1 | Storage temperature TSTG | -50℃～+85℃ |
| 2 | Working environment temperature Tc | -50℃～60℃ |
| 3 | Soldering temperature Tstd (time) | 260℃（10s） |
| 4 | Reverse DC bias voltage VDC | VBR+5V |
| 5 | Input optical power φe (continuous) | 1mW |
| 6 | Forward current IF (continuous) | 200μA |
| 7 | Electrostatic discharge sensitivity ESD | ≥300V |
| 8 | Pigtail pulling strength | 3.0N |
No. | Parameters | Rated value |
Recommended working conditions | 1 | APD chip operating temperature Tth | -50℃～-30℃ |
2 | Reverse DC bias voltage VDC | VBR+1V～VBR+5V |
Typical characteristic curve
Figure 1 Photocurrent and dark current curves
Figure 2 Breakdown voltage temperature coefficient
Quality reliability assurance
Implement the relevant requirements of GJB8119-2013 "General Specifications for Semiconductor Optoelectronic Devices"
SPD5522 InGaAs Geiger-mode Avalanche Photodiode.pdf
