The SPD5526 is a photon-counting InGaAs avalanche photodiode device with a monolithically integrated negative feedback resistor.Based on the high gain characteristics of the Geiger mode, the product multiplies the detected photon Geiger into a macroscopic current; the negative feedback resistor performs dynamic voltage division to achieve self-quenching and self-recovery of the Geiger avalanche electric field in the avalanche photodiode.
The SPD5526 is packaged in a TO-coaxial housing with a fiber pigtail. The optical input interface is a single-mode or multi-mode fiber with an FC/UPC connector and a 0.9 mm tight-buffer protective tube.
Main optoelectronic indicators
Linear mode parameters
Characteristic parameters | Test conditions (unless otherwise specified, TC = 25 ± 5 ° C) | Min. | Max. | Unit |
Spectral response range | - | 950 | 1650 | nm |
Reverse breakdown voltage VBR | ID=100nA | 60 | 85 | V |
Responsivity Re | λ=1.55μm，VR=VBR-1V，φe=1μw | 8 | - | A/W |
Dark current ID | VR=VBR-1Ｖ，φe=0 | - | 1 | nA |
Capacitance Ctot | VR =VBR-1V，f=1MHz | - | 0.6 | pF |
Integrated resistance value Rs | IF=200μA，φe=0 | 200±50 | KΩ |
Breakdown voltage temperature coefficient ŋ | TＣ=-45～+30℃，IR =10μA，φe=0 | 0.10 | 0.15 | V/℃ |
Geiger mode parameters
Characteristic parameters | Test conditions （TＣ=-40±3℃，fp=50KHz） | Min. | Max. | Unit |
Single photon detection efficiency PDE | λ=1550nm | 15 | - | % |
Dark count rate DCR | PDE=15% | - | 10 | kcps |
After pulse probability APP | PDE=15%，λ=1550nm，Δt=1us | - | 15 | % |
Pulse output amplitude Vout | PDE=15%，R=50Ω | 0.5 | - | mV |
Note:λ is the wavelength of incident light, fp is the frequency of optical pulse signal, and R is the sampling resistor.
Absolute Maximum Ratings and Recommended Operating Conditions
No. | Parameters | Rated value |
Absolute Maximum Ratings | 1 | Storage temperature TSTG | -50℃～+85℃ |
| 2 | Working environment temperature Tc | -50℃～60℃ |
| 3 | Soldering temperature Tstd (time) | 260℃（10s） |
| 4 | Reverse DC bias voltage VDC | VBR +5V |
| 5 | Input optical power φe (continuous) | 1mW |
| 6 | Forward current IF (continuous) | 200μA |
| 7 | Electrostatic discharge sensitivity ESD | ≥300V |
| 8 | Pigtail pulling strength | 3.0N |
No. | Parameters | Rated value |
Recommended working conditions | 1 | APD chip operating temperature Tth | -50℃～-30℃ |
| 2 | Reverse DC bias voltage VDC | VBR+1V～VBR+5V |
Typical characteristic curve
Figure 1 Photocurrent and dark current curves
Figure 2 Breakdown voltage temperature coefficient
Quality reliability assurance
Implement the relevant requirements of GJB8119-2013 "General Specifications for Semiconductor Optoelectronic Devices"
