Output Power

Po

40

60

mW

CW

Center Wavelength

λc

λI-0.5

*

λI

λI+0.5

nm

T=25℃

Spectral Linewidth (FWHM)

ΔνL

150

200

KHz

Lorentz linewidth

Side Mode Suppression Ratio

SMSR

40

dB

CW, @Po

Polarization Extinction Ratio

PER

20

dB

Applicable to polarization maintaining, along the slow axis

Relative Intensity Noise

RIN

-163

-155

dB/Hz

Optical Isolation Ratio

ISO

40

dB

TEC Set Temperature

TTEC

15

40

ºC

Threshold Current

Ith

15

30

mA

@TTEC

LD Working Current.

Ib

300

mA

CW, Po

LD Working Voltage

Vf

1.5

1.8

V

CW, Po

PD Bias Voltage

VR

4.75

5

5.25

V

Cathode to anode.

PD Current

Imc

2

mA

@Po

PD Dark Current

Imd

1

nA

VR=5V

Working Temperature

To

-40

25

80

⁰C

Storage Temperature

Ts

-40

80

⁰C

1

Thermistor

8

Case Ground

2

Thermistor

9

Case Ground

3

LD(-)

10

NC

4

Detector (+)

11

LD(+)

5

Detector (-)

12

LD (–), RF 

6

TEC (+)

13

LD (+)

7

TEC (–)

14

NC

2

Thermistor

9

N/C

3

PD Monitor Anode (-)

10

Laser Anode (+)

4

PD Monitor Cathode (+)

11

Laser Cathode (–)

5

Thermistor 

12

N/C

6

N/C

13

Case Ground

7

N/C

14

Thermoelectric Cooler (–)

Case Temperature

℃

-5

25

70

Chip Temperature

℃

+10

25

40

Operating Current

mA

0

200

300

Forward Voltage

V

0.8

1.2

1.8

TEC Current

A

-

-

1.2

Reverse Voltage（LD）

V

-

-

2.0

Reverse Voltage(PD)

V

-

-

20