1000um 900-1700nm TO46 package InGaAs Photodiode with TEC

Response Spectrum 900~1700nm, Active area 1000um, responsivity 0.9A/W@1.31µm or 1.0A/W@1.55µm, Package TO46

Part Number : SIN-1TE-TO46-1000

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Overview
Electrical/Optical Characteristics
PDF
RFQ

SIN-1TE-TO46-1000 series unit InGaAs detector is mainly composed of P-I-N structure InGaAs photosensitive chip, transition electrode plate, temperature sensor and Single Stage thermoelectric cooler (1TE), in the form of TO46 package. This user manual only describes the product series.

Electrical and optical characteristics (Tc=25℃, unless otherwise noted)

Parameter	Symbol	Min	Typ	Max	Unit	Test Condition
Active Area	φ	---	1000	---	um
Optical Wavelength Range	λ	900	---	1700	nm
Terminal capacitance	Ct	---	45	60	pF	VR=-5V,f=1MHz
Dark Current	Id	---	1.0	10.0	nA	VR= - 5V
Responsibility	Resp	0.8	0.9	---	A/W	VR= - 5V，λ=1310nm
Responsibility	Resp	0.9	1.0	---	A/W	VR= - 5V，λ=1550nm

Absolute Maximum Ratings

Parameter	Symbol	Min	Max	Unit	Note
Operating Temperature	TC	-40	+70	℃	Avoid dew condensation
Storage Temperature (Ambient)	TSTG	-40	+85	℃	Avoid dew condensation
Reverse Voltage	VR	---	20	V
Power dissipation	PD	---	100	mW
Forward current	IF	---	50	mA
Maximum optical power input	Pi(max)	---	50	mW
TEC current	IC	---	1	A
Thermistor power rating	Pth	---	1.5	mW

Standard

●Compliant with Telcordia GR-468

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1000um 900-1700nm TO46 package InGaAs Photodiode with TEC.pdf

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