The SPD6522Q is a InGaAs SPAD detector module，Operating wavelength 0.95μm～1.65μm,Designed for single photon detection applications, Internally integrated three-stage cooler,Butterfly-shaped hermetic packaged module with pigtail.
Main Optoelectronic Indicators
1. Linear mode parameters
Parameters | Test conditions（unless otherwise specified，TC =25±5℃) | Min | Max | Unit |
Effective detection surface diameter d | — | 25 | — | μm |
Spectral response range | — | 950 | 1650 | nm |
Reverse breakdown voltage VBR | IR=10 μA ，Φe=0 | 60 | 85 | V |
Responsivity Re | Φe=1μW，VR=(VBR-1)V, λ=1550 nm±50 nm | 8 |
| A/W |
Dark current ID | VDC =(VBR-1) V，Φe=0 |
| 1 | nA |
Capacitance Ctot | VDC =(VBR-1) V，f=1MHz | — | 0.2 | pF |
Breakdown voltage temperature coefficient η | TC =-45～+30℃ , IR =10μA，φe=0 | 0.10 | 0.2 | V/℃ |
2. Geiger Mode Parameters
Parameters | Test Conditions | Min | Max | Unit |
Single photon detection efficiency PDE | TA = -40±5℃, μ=1, fg = 1.0 GHz, fP = 500 kHz, DCR ≤ 2.5 kHz ，λ = 1.55μm | 10 |
| % |
Dark count rate DCR | TA = -40±5℃, fg = 1.0GHz， SPDE = 10%±0.5 % ，λ = 1.55μm |
| 2.5 | kHz |
After pulse probability APP (500 ns) | TA = -40±5℃, μ=1, fg = 1.0GHz, fP = 500 kHz, DCR ≤ 3.0 kHz, SPDE = 10% ，λ = 1.55μm |
| 4
| %
|
Time jitter TJ | SPDE=10% |
| 300 | ps |
Note: λ is the incident light wavelength, Tₐ is the test temperature value, μ is the average number of photons per pulse, fg is the gating signal frequency, and fₚ is the optical pulse signal frequency.
Absolute Maximum Ratings and Recommended Operating Conditions
Item | Parameter | Rating |
Absolute Maximum Ratings | 1 | Storage temperatureTSTG | -50℃~+85℃ |
2 | Operating environment temperatureTC | -50℃~60℃ |
3 | Soldering temperatureTsld（time） | 260℃（10s） |
4 | Reverse DC bias voltage VDC | VBR+5 V |
5 | Input optical powerφe（continuous） | 1 mW |
6 | Forward currentIF（continuous） | 200 μA |
7 | Electrostatic discharge sensitivityESD | ≥300 V |
8 | Pigtail pulling force | 3.0 N |
9 | TEC voltage | 11.9 V |
10 | TEC current | 0.8 A |
No. | Parameters | Rated value |
Recommended working conditions | 1 | APD chip operating temperature Tth | -50℃～-30℃ |
| 2 | Reverse DC bias voltage VDC | VBR+1V～VBR+5V |
Typical characteristic curve
Figure 1 Photocurrent and dark current curves
Figure 2 Breakdown voltage temperature coefficient
Quality reliability assurance
Implement the relevant requirements of GJB8119-2013 "General Specifications for Semiconductor Optoelectronic Devices"
SPD6522Q InGaAs SPAD detector module.pdf
