The SPD6527Q is a InGaAs SPAD detector module. It operates wavelength 0.95μm ~ 1.65μm, Specifically designed for single-photon detection applications,Internally integrated with a three-stage cooler, 62.5/125 μm multimode pigtail fiber, Butterfly hermetically sealed dual-channel module with pigtail.
Main Optoelectronic Indicators
1. Linear mode parameters
Parameters | Test conditions（unless otherwise specified，TC =25±5℃) | Min | Max | Unit |
Effective detection surface diameterd | — | 25 | — | μm |
Spectral response range | — | 950 | 1650 | nm |
Reverse breakdown voltage VBR | IR=10 μA ，Φe=0 | 60 | 85 | V |
Responsivity Re | Φe=1μW，VR=(VBR-1)V, λ=1550 nm±50 nm | 8 |
| A/W |
Dark current ID | VDC =(VBR-1) V，Φe=0 |
| 1 | nA |
Capacitance Ctot | VDC =(VBR-1) V，f=1MHz | — | 0.6 | pF |
Breakdown voltage temperature coefficient η | TC =-45～+30℃ , IR =10μA，φe=0 | 0.10 | 0.15 | V/℃ |
2. Geiger Mode Parameters
Parameters | Test Conditions | Min | Max | Unit |
Single photon detection efficiency PDE | TA = -40±5℃, μ=1 ，fg = 100 MHz ，fP = 500 kHz ，DCR ≤ 3.0 kcps ，λ = 1.55μm | 20 |
| % |
Dark count rate DCR | TA = -40±5℃, fg = 1.25 GHz， SPDE ≥ 20% ，λ = 1.55μm |
| 3 | kcps |
After pulse probability APP (1000 ns) | TA = -40±5℃, μ=1 ，fg = 1.25 GHz ，fP = 625kHz ，DCR ≤ 3.0 kHz ，SPDE ≥ 20% ，λ = 1.55μm |
| 1 | % |
Time jitter TJ | SPDE=20% |
| 300 | ps |
Note: λ is the wavelength of incident light, fp is the frequency of the optical pulse signal, and R is the sampling resistor.
Absolute Maximum Ratings and Recommended Operating Conditions
Item | Parameter | Rating |
Absolute Maximum Ratings | 1 | Storage temperatureTSTG | -50℃~+85℃ |
| 2 | Operating environment temperatureTC | -50℃~60℃ |
| 3 | Soldering temperatureTsld（time） | 260℃（10s） |
| 4 | Reverse DC bias voltage VDC | VBR+5 V |
| 5 | Input optical powerφe（continuous） | 1 mW |
| 6 | Forward currentIF（continuous） | 200 μA |
| 7 | Electrostatic discharge sensitivityESD | ≥300 V |
| 8 | Pigtail pulling force | 3.0 N |
| 9 | TEC voltage | 11.9 V |
| 10 | TEC current | 0.8 A |
Item | Parameter | Rating |
|
Recommended Operating Conditions | 1 | APD chip operating temperatureTth | -50℃~-30℃ |
|
| 2 | Reverse DC bias voltageVDC | VBR+1V～VBR+5V |
|
Typical characteristic curve
Figure 1 Photocurrent and dark current curves
Figure 2 Breakdown voltage temperature coefficient
SPD6527Q InGaAs SPAD Detector Module.pdf
