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  • 110 GHz Thin-Film Lithium Niobate Ultra-High Bandwidth Intensity Modulator

    • 110 GHz C-Band Thin-Film Lithium Niobate Intensity Modulator


    Operating Wavelength 1530-1565nm; Operating Bandwidth 110GHz

    Part Number  :  BC6PPBM71
    Unit Price  :  USD [Please inquire]
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    The Thin-Film Lithium Niobate Ultra-High Bandwidth Intensity Modulator is a high-performance electro-optic conversion device independently developed by our company, with full proprietary intellectual property rights. The product is packaged using high-precision optical coupling and assembly techniques, achieving an electro-optic 3 dB bandwidth of up to 110 GHz.Compared with traditional bulk lithium niobate crystal modulators, this product features low half-wave voltage (Vπ), high stability, compact device size, and thermo-optic bias control. It can be widely applied in digital optical communications, microwave photonics, backbone communication networks, and communication-related research projects.

    Product parameters: C band

    Category

    Parameters

    Symbol

    Unit

    Index

    Optical performance (@25°C)

    Operating Wavelength (*)

    λ

    nm

    ~1550

    Optical Extinction Ratio (@ DC) (**)

    ER

    dB

    ≥20

    Optical Return Loss

    ORL

    dB

    ≤-27

    Optical Insertion Loss

    IL

    dB

    Maximum value: 6

    Typical value: 5

    Electrical Performance (@25°C)

    3 dB Electro-Optical Bandwidth (from 2 GHz)

    S21

    GHz

    Minimum value: 100

    Typical value: 105

    RF Half-Wave Voltage (@ 50 kHz)

    Vπ

    V

    ≤4

    Thermal Bias Half-Wave Power

    Pπ

    mW

    ≤50

    RF Return Loss

    S11

    dB

    ≤-10

    Operating Conditions

    Operating Temperature (*)

    TO

    °C

    -20~70

    * Customizable.

    ** High extinction ratio (> 25 dB) available on request.


    Damage threshold

    If the device operates beyond the maximum damage threshold, it will cause irreversible damage to the device. 

    Parameters

    Symbol

    Min.

    Max.

    Unit

    RF input power

    Sin

    -

    18

    dBm

    RF input swing voltage

    Vpp

    -2.5

    +2.5

    V

    RF input RMS voltage

    Vrms

    -

    1.78

    V

    Optical input power

    Pin

    -

    20

    dBm

    Thermal bias voltage

    Uheater

    -

    4.5

    V

    Thermal bias current

    Iheater

    -

    50

    mA

    Storage temperature

    TS

    -40

    85

    ℃

    Relative humidity (non-condensing)

    RH

    5

    90

    %


    S21 test sample image (110 GHz typical)

    Thin Film Lithium53.png

    Figure 1: S21 

    Thin Film Lithium54.png

    Figure 1: S11

    Electrostatic Discharge (ESD) Protection

    This product contains ESD-sensitive components (MPDs). Necessary ESD protection measures must be taken when using it.

    Thin Film Lithium55.png


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