High-speed photodetector modules are of interest for the development of next.generation optical communication linksin datacom and telecom. Since these R&D links are always a step ahead interms of symbol rates, photodetector modules with a RF bandwidth beyond state-of-the-art are needed at the receiver side. Furthermore, the high-speed performance of the photodetector modules makes them applicable to microwave photonics.The photodetector chips inside the modules are based on mature InP technology and are fabricated at the wafer process line of offering Telcordia and space-qualifiedprocesses. The chips are packaged atFraunhofer HHl facilities.

Test conditions: 25 °C, unless otherwise specified

Bandwidth and Responsivity value test