The MIOC1310/1550C is a high-performance Y-waveguide phase modulator integrated circuit fabricated using a thin-film Lithium Niobate (TFLN) process. This multifunctional device is designed to polarize, split, and modulate optical signals.
| Name | Model | Description | Parameter | Price |
|---|
● Low Half-Wave Voltage (Vpi): Optimized for high-efficiency modulation.
● Low Insertion Loss: Minimizes signal attenuation across the waveguide.
● High Stability: Reliable performance under various operating conditions.
● Low Waveform Slope: Ensures high signal integrity.
● High Polarization Extinction Ratio: Superior polarization control for sensitive applications.
Unless otherwise noted, all tests are performed at 25°C
Parameter | Min | Typical | Max | Unit |
Operating Wavelength | - | 1310±20 or 1550±10 | - | nm |
Insertion Loss | - | 3.5 | 4 | dB |
Half-Wave Voltage (Vpi) | - | ≤3.5@1310nm | ≤4@1550nm | V |
Splitting Ratio | 48/52 | - | 52/48 | - |
EO Modulation Bandwidth | - | 300 | - | MHz |
Polarization Extinction Ratio | 55 | 60 | - | dB |
Back Reflection | - | - | -55 | dB |
Waveform Slope | - | - | 1/250 | - |
Residual Intensity Modulation | - | 0.2% | - | - |
Absolute Maximum Ratings
Parameter | Symbol | Rating | Unit |
Operating Temperature | Top | -45 to +70 | °C |
Storage Temperature | Tstg | -40 to +85 | °C |
Max Input Optical Power | Pmax | 200 | mW |
Max Input Voltage | Vmax | 15 | V |
Handling and Precautions
● ESD Protection: Necessary Electrostatic Discharge (ESD) measures must be taken to prevent chip damage.
● Physical Handling: Exercise extreme caution; avoid contact with the optical waveguide to maintain transmission efficiency.
● Bonding Process: Pressure, temperature, and other wire-bonding parameters must be carefully calibrated to avoid structural damage.
● This chip is ideally suited for the following fields:
● Fiber Optic Sensing
● Coherent Optical Communications
● Quantum Secure Communications