Operating Wavelength 1530-1565nm; Operating Bandwidth 40GHz
| Part Number : WPD-OE0002H |
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This product implements IQ modulation based on silicon-based thin-film lithium niobate, with a 3 dB bandwidth of ≥20/40/60 GHz and a half-wave voltage of ≤3.5 V. It is suitable for applications in digital communications, microwave photonics, and related technology fields.
Chip Specifications (Unless otherwise noted, all measurements are at 25 °C)
Parameter | Symbol | Test Condition | Minimum Value | Typical Value | Maximum Value | Unit |
Operating Wavelength | λ | 1550 (C-band) | nm | |||
Insertion Loss | IL | 1550 nm 0 dBm CW | 6.5 | 7 | dB | |
RF Half-Wave Voltage | Vπ | 1550 nm CW fmod=50kHz | 3.4 | 3.5 | V | |
3 dB Bandwidth | S21 | 20 / 40 / 60 | GHz | |||
Modulation Extinction Ratio | ER | 20 | dB | |||
RF Return Loss | S11 | -10 | Ω | |||
Thermal Tuning Resistance | RH | 80 | mW | |||
Thermal Tuning Pnn | Pπ | 50 | μm | |||
Input/Output Waveguide Mode Field Diameter | MFD | 9 | μm | |||
Input/Output Waveguide Pitch | Pitch | 1000 | μm | |||
Absolute Maximum Ratings
Parameter Name | Symbol | Rating Value | Unit |
Input Optical Power | Ps.o | 23 | dBm |
Input RF Power | Ps.rf | 23 | dBm |
Thermal Tuning Bias Voltage | VH | ±8 | V |
Operating Temperature | Tw | -40 ~ +85 | °C |
Storage Temperature | Ts | -40 ~ +85 | °C |