60GHz Thin-Film Lithium Niobate Q-Modulator Chip


Operating Wavelength 1530-1565nm; Operating Bandwidth 60GHz

Part Number  :  WPD-OE0003H
Unit Price  :  USD [Please inquire]
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This product implements IQ modulation based on silicon-based thin-film lithium niobate, with a 3 dB bandwidth of ≥20/40/60 GHz and a half-wave voltage of ≤3.5 V. It is suitable for applications in digital communications, microwave photonics, and related technology fields.

Chip Specifications (Unless otherwise noted, all measurements are at 25 °C)

Parameter

Symbol

Test Condition

Minimum Value

Typical Value

Maximum Value

Unit

Operating Wavelength

λ


1550 (C-band)

nm

Insertion Loss

IL

1550 nm 0 dBm CW


6.5

7

dB

RF Half-Wave Voltage

1550 nm CW fmod=50kHz 


3.4

3.5

V

3 dB Bandwidth

S21


20 / 40 / 60

GHz

Modulation Extinction Ratio

ER


20



dB

RF Return Loss

S11




-10

Ω

Thermal Tuning Resistance

RH



80


mW

Thermal Tuning Pnn

Pπ



50


μm

Input/Output Waveguide Mode Field Diameter

MFD



9


μm

Input/Output Waveguide Pitch

Pitch



1000


μm


Absolute Maximum Ratings

Parameter Name

Symbol

Rating Value

Unit

Input Optical Power

Ps.o

23

dBm

Input RF Power

Ps.rf

23

dBm

Thermal Tuning Bias Voltage

VH

±8

V

Operating Temperature

Tw

-40 ~ +85

°C

Storage Temperature

Ts

-40 ~ +85

°C


Related

Name Model Price
20GHz Thin-Film Lithium Niobate Q-Modulator Chip [PDF]

WPD-OE0001H

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40GHz Thin-Film Lithium Niobate Q-Modulator Chip [PDF]

WPD-OE0002H

[Please inquire]

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