Bent-waveguide 40GHz electro-optic intensity modulator chip


Operating Wavelength 1530-1565nm; Operating Bandwidth 40GHz

Part Number  :  TFLNC40G
Unit Price  :  USD [Please inquire]
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UFP offers Thin Film Lithium Niobate (TFLN) modulator chips in different formats and data rate, including DR8 and 2 x FR4 @ 100 Gbps/lane for 800 Gbps applications and DR4 @ 400 Gbps/lane for 1.6 Tbps applications. With expereince and know-how, AFR engineers are available to customize our products to meet customers' specific requirements.

Product Specifications (Test conditions: 25 °C, unless otherwise specified)

Parameters

Symbol

Test condition

Min.

Typ.

Max.

Unit

Operating Wavelength

λ


1550(C band)

nm

Insertion Loss

IL

1550nm 0dBm CW


4

4.5

dB

RF Half-Wave Voltage

1550nm CW fmod=50kHz


3.3

3.5

V

3 dB Bandwidth

S21


40/60

GHz

Modulation Extinction Ratio (ER)

ER


20



dB

RF Return Loss

S11




-10

dB

Thermal Tuning Resistance

R



80


Ω

Thermal Tuning Pπ



50


mW

Input/Output Waveguide Mode Field

MFD


4/9

μm

Input/Output Waveguide Spacing

Pitch


1600

μm


Maximum Absolute Ratings

Parameter Name

Symbol

Rated Value

Unit

Input Optical Power

Ps,o

23

dBm

Input Optical Return Loss

Ps,rf

23

dBm

Thermoelectric Cooler Voltage

VH

±8

V

Operating Temperature

TW

-40 ~ +85

°C

Storage Temperature

TS

-40 ~ +85

°C



Related

Name Model Price
Bent-waveguide 60GHz electro-optic intensity modulator chip [PDF]

TFLNC60G

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