LP-ECWDM-100-C-CN-CC is a Distribute Feedback (DFB) edge-emitting laser diode chip on carrier integrated with Electro-absorption Modulator (EAM) which provide a single longitudinal mode at CWDM wavelength and use in cooled applications up to 100 Gb/s. The chip structure is waveguide stripe, including multiple quantum wells (MQWs) active layers and distributed-feedback grating layer for high output power and high extinction ratio design. All chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for CW, dynamic and ESD tests. LP-E1xxx-100-C-CN-CC, 1xxx=1270, 1290, 1310, 1330
Characteristics for LP-E1xxx-100-C-CN-CC
Chip on carrier operating temperature (Top) is 55°C, except where noted. All parameters are beginning of life (BOL) unless stated otherwise
Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
Chip Operating Temperature | Top | ─ | 55 | ℃ |
Threshold Current (EML) | Ith | CW | ─ | ─ | 25 | mA |
Operation Current (LD) | Ild | CW | ─ | 80 | 120 | mA |
EAM Offset Voltage | Vea | ─ | -1.5 | ─ | 0 | V |
EAM P-P Modulation Voltage | Vpp | ─ | ─ | 1.2 | ─ | V |
Optical Output Power | Pop | CW, Ild =80mA, Vea =0V |
| 10 | ─ | mW |
Extinction Ratio | Er | CW, Ild =80mA, Vpp =1.2V | 4.5 | ─ | ─ | dB |
Peak Wavelength | λ1 | CW, Ild =80mA, Vea =0V | 1264.5 | ─ | 1277.5 | nm |
λ2 | 1284.5 | ─ | 1297.5 | nm |
λ3 | 1304.5 | ─ | 1317.5 | nm |
λ4 | 1324.5 | ─ | 1337.5 | nm |
Side Mode Suppression Ratio | SMSR | CW, Ild =80mA, Vea =0V | 35 | ─ | ─ | dB |
Spectral Width | △λ | CW, -20dB, Ild =80mA, Vea =0V | ─ | 0.2 | 0.4 | nm |
Wavelength Temp. Coefficient | △λ/△T | CW | ─ | 0.09 | ─ | nm/℃ |
Band Width | BW | -3dB | 35 | ─ | ─ | GHz |
Maximum Power Rating
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operations sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
No | Parameter | Symbol | Condition | Min | Max | Unit |
1 | Operating Temperature | Top | - | -5 | 75 | ℃ |
2 | Storage Temperature | Tst | - | -40 | 95 | ℃ |
3 | Optical Output Power | Po | - | - | 20 | mW |
4 | Laser Reverse Voltage | Vr | - | - | -2 | V |
5 | Laser Forward Current | Iop | - | - | 150 | mA |
6 | Modulator Reverse Voltage | Vmr | - | - | -3 | V |
7 | Modulator Forward Voltage | Vmf | - | - | 1 | V |
* These maximum stresses are to be applied only after the chip is properly bonded to a heat sink. Applying current to a bare chip can damage the device.
Dimensions and Layout
Qualification Information
● Qualification ongoing per Telcordia GR-468.
● Although all chips shipped come from wafers certified to meet stringent burn-in requirements, individual chips should be burned-in to filter out a small percentage of infant failures.
Laser Safety
WARNING: Integration of this laser die into a higher-level assembly or sub-assembly can result in a product that has radiation levels up to Class IIIb per CDRH, 21 CFR 1040. This die-level component has not been registered with the FDA/ CDRH since it is a sub-assembly level component only and requires further integration by the user in order to be biased to produce laser light. The actual light output and safety rating in operation will be a function of the installation and conditions under which it is used, including, but not limited to, the bonding method, heat sinking, thermal environment, and optical coupling design.
