• Home
  • Intensity Modulator Chip
  • 1064 nm Intensity Modulator Chip

    • 1064 nm Intensity Modulator Chip


    Operating Wavelength 1020nm - 1100nm; Maximum Input Optical Power 100 mW; Bandwidth (−3 dB) ≥10GHz; RF half-wave voltage 3.5V

    Part Number  :  IM-CHIPS-1064-10G-100
    Unit Price  :  USD [Please inquire]
    Lead time  :   [Please inquire]
    Inventory quantity   :   [Please inquire]
    Email UsRequest for Quotation

    Recommended

    This product utilizes a 1064 nm electro-optic intensity modulator chip based on lithium niobate thin film, featuring low insertion loss, high modulation bandwidth, and low half-wave voltage. It is primarily employed in space optical communication systems, cesium atomic time standards, pulse generators, quantum optics, and related fields.

    parameter

    symbol

    test condition

    least   value

    representative value

    crest value

    unit

    operating wavelength

    λ

    λin = 1064 nm;

    P-in light intensity = 0 dBm

    1020

    1060

    1100

    Nm

    insertion loss

    IL

    1060 nm CW，0 dBm

    -

    5.5

    6.5

    dB

    Work Bandwidth

    S21

    Start at 2 GHz

    10

    12

    -

    GHz

    Radio frequency echo loss

    S11


    -

    -10

    -

    dB

    Modulation extinction ratio

    ER

    1060 nm CW，0 dBm

    20

    25

    -

    dB

    Tail fiber polarization crosstalk

    Kp


    -

    -

    -25

    dB

    RF half-wave voltage

    VRFπ

    1060 nm CW，f=50 kHz

    -

    3.5

    -

    V

    DC half-wave voltage

    VDCπ

    1060 nm CW，f=50 kHz

    -

    3

    -

    V


    Maximum Absolute Rating Value

    Parameter Name

    symbol

    Rated Value

    unit

    Input optical power

    Ps,o

    100

    mW

    Input RF Power

    Ps,rf

    20

    dBm

    working temperature

    TW

    -40 ~ +80

    ℃

    storage temperature

    TS

    -55 ~ +85

    ℃


    External Dimensions and Pin Definitions

    tu2.png

    pin

    symbol

    remarks

    radio frequency interface

    RF

    GSG

    DC Port 1

    X1

    Bias Cathode

    DC Port 2

    X2

    Bias negative electrode

    DC Port 3

    X3

    MPD Anode

    DC Port 4

    X4

    MPD negative pole


    Usage Instructions

    The necessary ESD protection measures should be implemented to prevent electrostatic damage.

    Do not pull or bend the optical fiber; keep the optical connector clean before use.

    Carefully adjust parameters such as welding pressure and temperature to avoid damaging the chip


    Request for Quotation

    By using this website and services, you agree to our use of cookies. Cookies enable us to better provide member services and record your browsing records in a short time. OK Learn more
    10+
    10 Years of Experience
    50+
    50 + Countries Bussiness
    10000+
    10k + Diodes sold worldwide
    30+
    30+ Invention patent
    1
    1 Semiconductor Lab
    10
    10+ Advanced Optical Solutions
    Add : 288 Woodlands Loop #04-00, Singapore 738100 Email : info@ld-pd.com Tel : （+65)31638599 Fax : (+65)31588700 Copyright © 2012-2026 LD-PD PTE. LTD. All Rights Reverved  LD-PD PTE. LTD. is proud to be RoHS certified through SGS and ISO9001 certified through GIC.
    close[X]
    Your shopping cart
    Model Quantity Price Subtotal
    Total price：USD:
    View shopping cart Settlement
    ︿ TOP
    提示