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    • 55GHz Back-illuminated PIN Photodetector Chip


    Response wavelngth 1000-1680nm, Material InGaAs, Active diameter 10um, Die Package, L×W×T 420μm×400μm×100μm （Min Order:100PCS）

    Part Number  :  BIPD-55-10
    Unit Price  :  USD [Please inquire]
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    Recommended

    The 55GHz back-illuminated PIN photodetector chip is an InP/InGaAs PIN photodetector integrated with a microlens structure. It can be packaged with other devices using flip-chip micro-bump bonding, and features high bandwidth, high responsivity, and low dark current. It is suitable for applications in high-speed optical communications, data centers, high-end instrumentation, microwave photonics, and other fields.

    Electro-Optical Characteristics

    Parameter

    Symbol

    Test    Condition

    Min.

    Typ.

    Max.

    Unit

    Operating Temperature

    T0


    0

    25

    75

    ℃

    Storage Temperature

    Ts


    -40


    85

    ℃

    Operating Wavelength

    λ


    1310/1550

    nm

    Bias Voltage

    Vb



    -2


    V

    Incident Optical Power

    Ps,o



    0

    7

    dBm

    3 dB Bandwidth

    BW

    Ps,o = 0 dBm, Vb=   -2 V

    50

    55


    GHz

    Responsivity

    R

    λ = 1310 nm, Vb= -2 V

    0.60

    0.62


    A/W

    Dark Current

    Id

    Vb= -2 V


    18

    20

    nA


    S21 Test Curve

    55GHz Back-illuminated PIN Photodetector Chip.png


    Product Specifications

    Parameter

    Symbol

    Min.

    Typ.

    Max.

    Unit

    Chip Length

    L

    390

    420

    450

    μm

    Chip Width

    W

    370

    400

    430

    Chip Thickness

    H

    140

    150

    160

    Electrode Spacing

    Gap

    100 or 125, Optional

    Pad Diameter

    Фp


    70


    Active Area Diameter

    Da


    10


    Microlens Diameter

    Фl

    110

    120

    130



    Download

    55GHz Back-illuminated PIN Photodetector Chip.pdf


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